Antiferromagnetic Spintronics: Understanding the strain

反铁磁自旋电子学：了解应变

• 批准号: 2435231
• 金额: --
• 依托单位: University of Leeds
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2435231
• 关键词: Antiferromagnetic; Spintronics; Understanding; strain

Ferromagnetic materials have underpinned data storage technology for decades. This is not just for the data storage but also for 'spintronic' components such as magneto-resistive field sensors and magnetic tunnel junctions. With the desire to increase the speed of devices and pack components more densely, researchers are now turning to anti-ferromagnetic materials. Externally, these materials look non-magnetic, but on the atomic level they consist of exactly cancelling opposing magnetic moments. For a long-time they have been overlooked due to the difficulties in controlling the internal order (they do not couple strongly to magnetic fields) but recent discoveries in spin-orbit torques show that electrical manipulation and readout is possible paving the way to antiferromagnetic spintronics. Even though this is a recently created field, it is rapidly evolving, and proof of concept desktop memory devices have already been demonstrated.In ferromagnetic devices, the demagnetising field causes the shape of a device to influence the equilibrium magnetisation state and determine the domain state. The non-locality of the field means analytic solutions are only available for trivial cases. Calculating and understanding the demagnetising field of ferromagnets is one of the most important modelling problems in magnetism, spawning many competing 'micromagnetism' software packages.In antiferromagnets, there is no demagnetising field because there is no net magnetisation, yet antiferromagnets also contain complex magnetic domains. It is believed that magnetostriction and magnetoelastic effects may be the driving force. These too are non-local and shape dependent. Recent experiments in antiferromagnetic spintronics have shown the domain state and the motion of domains are important in the interpretation of electrical signals, manipulation of domains and the propagation of spin currents.We propose to solve the coupled magnetostriction, magnetoelastic, antiferromagnetic order problem to understand domain formation, shape and motion. This will allow us to provide clear interpretations of experimental results, for example why antiferromagnet domain formation and behaviour is radically different depending on the crystallographic cut of a thin film. We also anticipate modelling the dynamics when spin-orbit torques are applied, to understand domain nucleation, destruction, expansion and migration. In the long term it would also be interesting to understand how dynamical stresses (such as applied by piezo actuators) could be used to manipulate the properties of antiferromagnets

几十年来，铁磁材料一直是数据存储技术的基础。这不仅适用于数据存储，也适用于“自旋电子”组件，如磁阻场传感器和磁隧道结。由于希望提高设备的速度和更密集地封装组件，研究人员现在转向反铁磁材料。从表面上看，这些材料是非磁性的，但在原子水平上，它们由相互抵消的相反磁矩组成。长期以来，由于难以控制内部秩序（它们不与磁场强烈耦合），它们被忽视了，但最近在自旋轨道扭矩方面的发现表明，电操纵和读出是可能的，为反铁磁自旋电子学铺平了道路。尽管这是一个新创建的领域，但它正在迅速发展，桌面存储设备的概念已经得到了证明。在铁磁器件中，退磁场使器件的形状影响平衡磁化状态并决定畴态。场的非定域性意味着解析解只适用于平凡的情况。计算和理解铁磁体的退磁场是磁学中最重要的建模问题之一，产生了许多相互竞争的“微磁性”软件包。在反铁磁体中，没有退磁场，因为没有净磁化，但反铁磁体也包含复杂的磁畴。认为磁致伸缩和磁弹性效应可能是其驱动力。这些也是非局部的和形状依赖的。最近反铁磁自旋电子学的实验表明，畴态和畴的运动在电信号的解释、畴的操纵和自旋电流的传播中是重要的。我们提出解决耦合磁致伸缩、磁弹性、反铁磁有序问题，以了解畴的形成、形状和运动。这将使我们能够对实验结果提供清晰的解释，例如，为什么反铁磁畴的形成和行为会因薄膜的晶体切割而完全不同。我们还期望在应用自旋轨道扭矩时建立动力学模型，以了解区域成核，破坏，扩展和迁移。从长远来看，了解动态应力（例如由压电致动器施加的应力）如何用于操纵反铁磁体的性质也是很有趣的