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Improving gate fidelities for laser-written nitrogen vacancy centres in diamond membranes

Improving gate fidelities for laser-written nitrogen vacancy centres in diamond membranes
提高金刚石膜中激光写入氮空位中心的栅极保真度
批准号:
2445772
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2020
资助国家:
英国
项目状态:
未结题
起止时间:
2020 至 --

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英文摘要
If a quantum computer could be built with enough qubits, it would be able to solve problems that are intractable with the classical computers we have now. A leading design for this is to build nodes with five or more interacting qubits, and then link up many of these nodes. Nitrogen vacancy centres (NVC) in diamond at cryogenic temperatures have been used to demonstrate this linking by entangling their electron spins optically. The nuclear spins coupled to NVC can have long coherence times of over 10 seconds. This project will make use of our laser-written NVC and the laser-written electrical wires we can create around them [1, 2]. The laser writing is done by the group of our collaborator Patrick Salter in Oxford University. We will build arrays of these qubits inside diamond membranes so that the diamonds can be put into optical cavities in the group of Jason Smith in Oxford. We will measure spin coherence times and improve the fidelity of the spin control. Initial experiments will be at room temperature, but cryogenic measurements will be used also as this is needed to entangle two NVC. We collaborate with Jason Smith's group in Oxford, Element Six and Oxford Instruments Plasma Technology as part of the UK National Quantum Computation and Simulation (QCS) Hub. This PhD studentship is funded by the EPSRC through this Hub.
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面向无人机应用的增强型p-gate AlGaN/GaN HEMT高功率微波辐射效应及 机理研究
二次外延势垒层的新型p-gate GaN HEMT器件栅极可靠性研究
直接带隙In2Se3、GaTe纳米片/MoS2复合薄膜的制备及饱和吸收性能的研究
  • 批准号:
    2020A151501861
  • 项目类别:
    省市级项目
  • 资助金额:
    10.0万元
  • 批准年份:
    2020
  • 负责人:
    龙慧
  • 依托单位:
二次外延AlGaN势垒层的增强型p-gate GaN HEMT新结构研究