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Nanoscale optoelectronic characterisation of low-dimensional Dirac materials for terahertz device applications

用于太赫兹器件应用的低维狄拉克材料的纳米级光电表征

基本信息

批准号：
2602263
负责人：
金额：
--
依托单位：
University of Manchester
依托单位国家：
英国
项目类别：
Studentship
财政年份：
2021
资助国家：
英国
起止时间：
2021 至无数据
项目状态：
未结题

来源：
https://gtr.ukri.org/projects?ref=studentship-2602263
关键词：
Nanoscale optoelectronic characterisation low dimensional

项目摘要

Dirac materials have emerged as promising candidates for energy-efficient device applications, owing to their perfectly-conducting surface states and doping tuneability. Recent studies have also demonstrated that are good emitters of terahertz radiation. By exploiting their bandstructure topology, all-optical control of the emitted THz waveform can also be accomplished. In particular, polarisation control can be achieved simply by switching the helicity of photoexcitation light. This is an important result for terahertz device applications, as to date polarisation control has been elusive and required pulse shaping. This project will investigate novel low-dimensional topological materials, such as the Dirac semi-metal cadmium arsenide, to assess the suitability for terahertz device applications. Terahertz spectroscopy and microscopy will be used to perform non-contact, non-destructive optoelectronic characterisation of these materials on micron and nanometre length scales respectively. This will allow key transport parameters, such as mobility, carrier lifetime and extrinsic carrier concentration, to be mapped on both length scales, providing unique insight into the underlying physical mechanisms governing transport in these materials that will directly feed into development of next-generation devices (namely terahertz photodetectors).

狄拉克材料由于其完美的导电表面态和掺杂的介电常数，已经成为节能器件应用的有希望的候选者。最近的研究也表明，是很好的太赫兹辐射的发射器。通过利用它们的能带结构拓扑结构，也可以实现对所发射的太赫兹波形的全光控制。特别地，可以简单地通过切换光激发光的螺旋度来实现偏振控制。这对于太赫兹器件应用来说是一个重要的结果，因为迄今为止，偏振控制一直难以实现，并且需要脉冲整形。该项目将研究新型低维拓扑材料，如狄拉克半金属砷化镉，以评估太赫兹器件应用的适用性。太赫兹光谱和显微镜将分别用于在微米和纳米长度尺度上对这些材料进行非接触、非破坏性的光电表征。这将允许关键的传输参数，如迁移率，载流子寿命和非本征载流子浓度，被映射到两个长度尺度上，提供独特的洞察到这些材料中的传输，将直接进入下一代设备（即太赫兹光电探测器）的开发管理的基本物理机制。