Location sensitive photodetectors based on strained 2D materials

基于应变二维材料的位置敏感光电探测器

• 批准号: 2729602
• 金额: --
• 依托单位: Durham University
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2729602
• 关键词: Location; sensitive; photodetectors; based; strained

Strained semiconductors are often regarded as means to improving the electronic properties of future devices. For example, strained silicon can exhibit increased mobility and has been highlighted as a key feature in continued miniaturisation of CMOS. In contrast to bulk materials, where strain is produced by lattice-mismatched growth that is predetermined and limited to low strains, atomically-thin materials can sustain significantly higher strain levels, due to their large area-to-thickness aspect ratio, making the changes to their electronic properties more pronounced. The aim of this project is twofold. First, it seeks to generate an understanding of charge carrier dynamics within strained TMDCs. In particular, the capture and emission properties of charges within TMDC flakes and in the vicinity of edges and interfaces. The second aim is to develop a sensing platform that is based on the modified electrical impedance of strained, large area TMDC films. The project will use a combination of scanning probe measurements to quantify the carrier concentration, the concentration of trap states and their energy distribution. It is envisaged that a full electrostatic map of the materials will emerge which will be utilised to prototype a location sensitive photodetector based on the knowledge gathered in these experiments.

应变半导体通常被认为是改善未来器件电子性能的手段。例如，应变硅可以表现出更高的迁移率，并已被强调为CMOS持续集成的关键特征。与其中应变由晶格失配生长产生的块体材料相反，晶格失配生长是预定的并且限于低应变，原子级薄的材料可以维持显著更高的应变水平，这是由于它们的大面积与厚度的纵横比，使得它们的电子性质的变化更显著。该项目的目的有两个。首先，它试图产生一个应变TMDC内的载流子动力学的理解。特别是TMDC薄片内以及边缘和界面附近的电荷的捕获和发射特性。第二个目标是开发一种基于应变的大面积TMDC膜的修改的电阻抗的传感平台。该项目将使用扫描探针测量的组合来量化载流子浓度、陷阱态浓度及其能量分布。据设想，一个完整的静电地图的材料将出现，这将被用来原型的位置敏感的光电探测器的基础上，在这些实验中收集的知识。