Ion implantation into semiconductors: studying a new manufacturing technique

半导体离子注入：研究新的制造技术

• 批准号: 2879895
• 金额: --
• 依托单位: University College London
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2879895
• 关键词: Ion; implantation; into; semiconductors; studying

This project will use atom probe tomography (APT) to study ion implantation into semiconductors with a new manufacturing and characterisation technique based on ionic liquid beams.Ionic liquids are mixtures of cations and anions without an intervening solvent. An Ionic Liquid Ion Source (ILIS) is a device in which the liquid covers a sharpened needle. The needle is subjected to electric fields to produce an ion beam. The resulting beam can be used to treat materials.ILIS provide a large variety of ion chemistries, including organic molecules, simple atomic halogens, and heavily fluorinated species. Fast etching of silicon has been demonstrated after ILIS irradiation, thanks to the reactivity of fluorinated species in the beam [1]. ILIS can be used for manufacturing (e.g. microelectronics fabrication) and in advanced characterisation of materials. The ILIS beam could be focused and used to mill materials at the nanoscale, enabling tomography or the preparation of samples for transmission electron microscopy. ILIS could also be used to perform secondary ion mass spectrometry.This project will study the implantation of ILIS ions into semiconductors, which should be understood if ILIS is used in manufacturing or characterisation. APT allows analysis of materials in three dimensions with sub-nanometer resolution, and has been used previously to study ion implantation [2]. APT will be used to profile the sub-surface chemical composition of ILIS-irradiated samples. Commercially available silicon pillars will be treated with a variety of ILIS beams. The pillars will then be shaped into atom probes using focused ion beam, and APT will be used to determine the implantation depths of chemical species contained in the ion beam. This work should further develop APT as an implantation characterisation technique.[1] C Perez-Martinez et al., J. Vac. Sci. Technol. B 28 (2010) L25[2] K Eder et al., Ultramicroscopy 228 (2021) 113334

该项目将使用原子探针层析成像（APT）研究离子注入半导体的新制造和表征技术，该技术基于离子液体束。离子液体是阳离子和阴离子的混合物，没有介入溶剂。离子液体离子源（ILIS）是一种液体覆盖锋利针头的设备。针受到电场作用以产生离子束。ILIS提供了大量的离子化学物质，包括有机分子、简单的原子卤素和高度氟化的物质。由于离子束中氟化物质的反应性，ILIS辐照后硅的快速蚀刻已得到证实[1]。ILIS可用于制造（例如微电子制造）和材料的高级表征。ILIS光束可以聚焦并用于纳米级的材料研磨，从而实现断层扫描或透射电子显微镜样品的制备。ILIS也可用于进行二次离子质谱分析。本项目将研究ILIS离子注入半导体，如果ILIS用于制造或表征，则应了解这一点。APT允许以亚纳米分辨率分析三维材料，并且先前已用于研究离子注入[2]。APT将用于分析ILIS辐照样品的次表面化学成分。市售的硅柱将用各种ILIS光束处理。然后将使用聚焦离子束将柱成形为原子探针，并且将使用APT来确定离子束中包含的化学物质的注入深度。这项工作应进一步发展APT作为植入表征技术。[1]C Perez-Martinez等人，J. Vac. Sci. Technol. B 28（2010）L25[2] K Eder等人，超显微镜228（2021）113334