Development of active gate drivers for compound-semiconductor-based Net Zero energy systems

为基于化合物半导体的净零能源系统开发有源栅极驱动器

• 批准号: 2888285
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2888285
• 关键词: Development; active; gate; drivers; compound

Net Zero energy system relies on power electronics devices significantly. Examples include solar photovoltaic inverters converting 600 Volts DC to 230 Volts AC. These devices operate their semiconductor power switches at increasingly high frequencies (e.g., from 10 to 100 kHz). Every semiconductor power switch is driven by its gate driver. This project will develop an active gate driver which enhances energy efficiency and reduces the electromagnetic interference of power electronics devices by using an innovative control algorithm. The designed active gate driver can drive compound-semiconductor-based power switches with low power loss and double up the energy saving of Net Zero systems

净零能耗系统对电力电子器件的依赖性很大。例子包括将600伏DC转换为230伏AC的太阳能光伏逆变器。这些器件以越来越高的频率（例如，从10到100 kHz）。每个半导体功率开关都由其栅极驱动器驱动。本项目将开发一种有源栅极驱动器，通过使用创新的控制算法来提高能源效率并减少电力电子设备的电磁干扰。所设计的有源栅极驱动器可以驱动基于化合物半导体的功率开关，具有低功耗，并使Net Zero系统的节能率提高一倍