SPHERICALLY BENT SI ANALYSER CRYSTALS FOR RIXS WITH INTRENSIC RESOL OF 150 MEV

用于 RIXS 的球面弯曲 SI 分析仪晶体，本征解析度为 150 MEV

• 批准号: 7369172
• 负责人: Stephen P. Cramer
• 金额: $ 2.36万
• 依托单位: ILLINOIS INSTITUTE OF TECHNOLOGY
• 依托单位国家: 美国
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-04-01 至 2007-03-31
• 项目状态: 已结题
• 来源: https://reporter.nih.gov/project-details/7369172
• 关键词: SPHERICALLY; BENT; SI; ANALYSER; CRYSTALS

This subproject is one of many research subprojects utilizing the resources provided by a Center grant funded by NIH/NCRR. The subproject and investigator (PI) may have received primary funding from another NIH source, and thus could be represented in other CRISP entries. The institution listed is for the Center, which is not necessarily the institution for the investigator. High-resolution RIXS is a highly promising technique for investigation of 3d and 4d transition metals in materials science and biology. RIXS at the 1s resonances with lowest incident energies (K pre-edges) is a very recent, exciting technique. We have constructed installed at BioCAT a high resolution spherical analyzer for emitted x-rays which uses a variety of Si and Ge crystals at 0.8 - 1.0 m Roland circle radius. A typical intrinsic energy resolution of this analyzer is about 1 eV (FWHM) and this limits overall experimental resolution. Improvement of this resolution to the order of ~200-300 meV should substantially increase the information content of the spectra. We will use beamtime to enhance resolution by adapting our instrument to accommodate crystals with a 2 m circular radius and to investigate the geometric limitations of our apparatus. By perfecting each aspect of the fabrication and by using the "anodic bonding" technique to bind the Si wafer to a spherical glass substrate, silicon bent analysers can provide the required resolution and such analysers have been successfuly produced by our collaborators for several K edges of 3d transition metals, enormously improving the potential energy resolution compared to the standard spherically bent analysers. Hence, we intend to use for the first time in our existing setup at BioCAT Si (551) spherically bent at 2 m. These enable analysis of photons with scattered energy roughly ranging from 8200 eV to 8500 eV - around Ni K-edge at 8333 eV - and with an overall resolution energy of 400-450 meV (FWHM) in experimental conditions.

该子项目是利用NIH/NCRR资助的中心赠款提供的资源的许多研究子项目之一。子项目和研究者（PI）可能从另一个NIH来源获得主要资金，因此可以在其他CRISP条目中表示。所列机构为中心，不一定是研究者所在机构。高分辨率RIXS是研究材料科学和生物学中3d和4d过渡金属的一种非常有前途的技术。RIXS在1 s共振与最低入射能量（K前边缘）是一个非常新的，令人兴奋的技术。 我们已经在BioCAT建造安装了一个高分辨率球形分析仪，用于发射X射线，该分析仪使用各种硅和锗晶体，半径为0.8 - 1.0 m罗兰。该分析仪的典型固有能量分辨率约为1 eV（FWHM），这限制了整体实验分辨率。将这种分辨率提高到~200-300 meV的数量级，将大大增加光谱的信息含量。我们将使用beamtime，以提高分辨率，通过调整我们的仪器，以适应晶体与2米的圆形半径，并调查我们的设备的几何限制。 通过完善制造的每个方面，并通过使用“阳极键合”技术将Si晶片绑定到球形玻璃衬底，硅弯曲分析仪可以提供所需的分辨率，并且我们的合作者已经成功地生产了用于3d过渡金属的几个K边的分析仪，与标准球形弯曲分析仪相比，极大地提高了势能分辨率。因此，我们打算在BioCAT Si（551）的现有设置中首次使用2 m球形弯曲。这些使得能够分析散射能量大致在8200 eV至8500 eV范围内的光子-在8333 eV处的Ni K边缘周围-并且在实验条件下具有400-450 meV（FWHM）的总体分辨率能量。