SPHERICALLY BENT SI ANALYSER CRYSTALS FOR RIXS WITH INTRENSIC RESOL OF 150 MEV

这个子项目是利用由NIH/NCRR资助的中心拨款提供的资源的许多研究子项目之一。子项目和调查员(PI)可能从另一个NIH来源获得了主要资金，因此可能会出现在其他CRISE条目中。列出的机构是针对中心的，而不一定是针对调查员的机构。高分辨RIXS在材料科学和生物学中是一种非常有前途的研究3D和4D过渡金属的技术。入射能量最低的1s共振(K个预沿)的RIXS是一种非常新的、令人兴奋的技术。我们已经建造了一台安装在BioCAT的高分辨率球面X射线分析器，它使用了0.8-1.0米罗兰圆半径的各种硅和锗晶体。该分析仪的典型本征能量分辨率约为1 eV(FWHM)，这限制了整体实验分辨率。将这一分辨率提高到~200-300 meV数量级，应该会大大增加光谱的信息含量。我们将利用光束时间通过调整我们的仪器来提高分辨率，以适应2米圆半径的晶体，并调查我们仪器的几何限制。通过完善制造的每一个方面，并通过使用“阳极键合”技术将硅片绑定到球形玻璃衬底上，硅弯分析仪可以提供所需的分辨率，并且我们的合作者已经成功地为3D过渡金属的几个K边生产了这样的分析仪，与标准的球弯分析仪相比，极大地提高了势能分辨率。因此，我们打算在我们现有的装置中首次使用在2m处球状弯曲的BioCAT Si(551)。这使得能够分析散射能量大致从8200 eV到8500 eV的光子-在8333eV的Ni K边缘附近-在实验条件下总分辨率能量为400-450 meV(半高宽)。

This subproject is one of many research subprojects utilizing the resources provided by a Center grant funded by NIH/NCRR. The subproject and investigator (PI) may have received primary funding from another NIH source, and thus could be represented in other CRISP entries. The institution listed is for the Center, which is not necessarily the institution for the investigator. High-resolution RIXS is a highly promising technique for investigation of 3d and 4d transition metals in materials science and biology. RIXS at the 1s resonances with lowest incident energies (K pre-edges) is a very recent, exciting technique. We have constructed installed at BioCAT a high resolution spherical analyzer for emitted x-rays which uses a variety of Si and Ge crystals at 0.8 - 1.0 m Roland circle radius. A typical intrinsic energy resolution of this analyzer is about 1 eV (FWHM) and this limits overall experimental resolution. Improvement of this resolution to the order of ~200-300 meV should substantially increase the information content of the spectra. We will use beamtime to enhance resolution by adapting our instrument to accommodate crystals with a 2 m circular radius and to investigate the geometric limitations of our apparatus. By perfecting each aspect of the fabrication and by using the "anodic bonding" technique to bind the Si wafer to a spherical glass substrate, silicon bent analysers can provide the required resolution and such analysers have been successfuly produced by our collaborators for several K edges of 3d transition metals, enormously improving the potential energy resolution compared to the standard spherically bent analysers. Hence, we intend to use for the first time in our existing setup at BioCAT Si (551) spherically bent at 2 m. These enable analysis of photons with scattered energy roughly ranging from 8200 eV to 8500 eV - around Ni K-edge at 8333 eV - and with an overall resolution energy of 400-450 meV (FWHM) in experimental conditions.