Technologies for SiC electronics and sensors in extreme environments

极端环境下的 SiC 电子和传感器技术

• 批准号: EP/D068827/1
• 负责人: Nicholas Wright
• 金额: $ 65.03万
• 依托单位: Newcastle University
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FD068827%2F1
• 关键词: Technologies; SiC; electronics; sensors; extreme

Silicon Carbide (SiC) electronics and sensor technologies will play an important role in the energy and transport technologies of the 21st Century. Environmental pressures to cut back on greenhouse gas emissions coupled with diminishing fossil fuel resources will drive a continuing increase in the use of electricity as the preferred point-of-use energy delivery mechanism. The efficient and flexible conversion of electrical energy is increasingly accomplished through the use of power electronics, a technology and business area that is set to expand rapidly over the next decades. SiC, in common with other wide band-gap semiconductors, offers the potential for dramatic improvements in the efficiency and range of applications for power electronics. It is thus seen as an enabler for many innovative energy and transport developments, such as power-dense electronics for the more electric aircraft, hybrid/all-electric road vehicles and rail traction or for application to the electricity generation and distribution network, where high-speed high-voltage switches are needed.The principal aim of this Platform Grant is to facilitate long-term, innovative, generic research into technologies that will deliver SiC electronics and sensor technology to extreme environment applications. This aim will be achieved through three specific objectives. First and foremost the Platform Grant will facilitate the retention of a core of expert research staff and provide for their career development within a secure and stable employment environment. Secondly, it will complement current and planned research activities by allowing the Team to address speculative but strategically important issues associated with SiC electronics and sensors. Thirdly, it will address the wider development needs of the Team by providing funds for a range of international exchanges. We foresee an increasing international effort towards realising the benefits of SiC devices in real-life applications and systems and much of the proposed research is orientated in that direction. We plan major new investigations into applying advanced SiC devices coupled with new material fabrication methods to significant systems applications / in particular energy conversion (of crucial importance in all forms of renewable power) and new types of sensors for emerging areas such as real-time pollution monitoring in automobiles. Such developments will provide real benefit to society whilst opening up significant new commercial markets to those companies that can adopt these genuinely disruptive technologies. Alongside this system level perspective will be crucial developments in materials technologies (such as the application of new types of dielectric technology) and novel devices (SiC transistors fabricated using such dielectrics) that will underpin the dramatic improvements in system level performance that will arise from the application of such technologies.

碳化硅（SiC）电子和传感器技术将在21世纪的能源和运输技术中发挥重要作用。减少温室气体排放的环境压力，加上化石燃料资源的减少，将推动电力的使用继续增加，作为首选的使用点能源输送机制。电能的高效和灵活转换越来越多地通过使用电力电子来实现，这是一个在未来几十年内将迅速扩展的技术和业务领域。SiC与其他宽带隙半导体一样，具有显著提高电力电子器件效率和应用范围的潜力。因此，它被视为许多创新能源和运输发展的推动者，例如用于更多电动飞机，混合动力/全电动道路车辆和铁路牵引的功率密度电子产品，或用于需要高速高压开关的发电和配电网络的应用。对将SiC电子和传感器技术应用于极端环境应用的技术进行一般性研究。这一目标将通过三个具体目标来实现。首先，平台赠款将有助于保留核心的专家研究人员，并为他们在安全和稳定的就业环境中的职业发展提供便利。其次，它将通过允许团队解决与SiC电子和传感器相关的投机性但具有战略重要性的问题来补充当前和计划的研究活动。第三，它将通过为一系列国际交流提供资金，满足监测组更广泛的发展需要。我们预计，国际社会将越来越多地努力实现SiC器件在实际应用和系统中的优势，许多拟议的研究都是朝着这个方向发展的。我们计划进行重大的新研究，将先进的SiC器件与新的材料制造方法相结合，应用于重要的系统应用/特别是能源转换（在所有形式的可再生能源中至关重要）和新兴领域的新型传感器，如汽车实时污染监测。这些发展将为社会带来真实的好处，同时为那些能够采用这些真正颠覆性技术的公司打开重要的新商业市场。除了这种系统级的观点，材料技术（如新型电介质技术的应用）和新型器件（使用这种电介质制造的SiC晶体管）的关键发展将支持系统级性能的显着改善，这些技术的应用将产生。

项目成果

Temperature Stability of Heteropolytypic 6H/3C FETs

• DOI: 10.4028/www.scientific.net/msf.556-557.843
• 发表时间: 2007-08
• 期刊: Materials Science Forum
• 作者: Chia Ching Chen;A. Horsfall;N. Wright;K. Vassilevski

Trap assisted conduction in high k dielectric capacitors on 4H-SiC

4H-SiC 上高 k 介电电容器的陷阱辅助传导

• 作者: Alton Horsfall (Author)

DNA-based inorganic and polymer nanowires: Synthesis, characterization and electrical properties of nanoelectronic components

基于 DNA 的无机和聚合物纳米线：纳米电子元件的合成、表征和电性能

• 作者: Alton Horsfall (Author)

Impact ionization in ion implanted 4H-SiC photodiodes

离子注入 4H-SiC 光电二极管中的碰撞电离

• 作者: Alton Horsfall (Author)

Applications-based design of SiC technology

SiC 技术的基于应用的设计

• 作者: Alton Horsfall (Author)