Development of air-stable n-channel organic field-effect transistors based on soluble fullerene derivatives

我们的目标是开发使用可溶性富勒烯衍生物的空气稳定的高迁移率(&gt；0.1 cm^2/vs)电子传输(n沟道)有机场效应晶体管(OFET)。开发n沟道OFET的主要动机是实现互补电路设计，这是制造下一代大规模、低功耗、高性能有机集成电路的关键因素。作为我们的主力材料，我们选择了富勒烯家族，因为它们的电子迁移率达到了创纪录的水平(~6cm2/vs)。由于其在大面积、低制造成本应用中的加工优势，人们将重点放在了可溶性衍生物上。拟议工作的新颖性源于我们最近的研究，其中第一个溶液处理、空气稳定的n沟道富勒烯晶体管已经被证明。就我们所知，这种溶解性、环境稳定性和电子传输特性的独特组合以前只在两个有机分子中得到证实，可以被认为是一个重大突破。拟议工作的主题是非常热门的，在有机电子领域具有巨大的技术重要性，预计将在世界范围内的学术研究和工业研发方面产生重大影响。

We aim to develop air-stable high mobility (>0.1 cm^2/Vs) electron transporting (n-channel) organic field-effect transistors (OFETs) employing soluble fullerene derivatives. The main motivation for developing n-channel OFETs is that they enable complementary circuit design, a vital ingredient for the fabrication of the next generation large-scale, low-power, high-performance organic integrated circuits. As our material workhorse we choose the family of fullerenes due to their record-breaking electron mobility (~6 cm2/Vs). Emphasis is placed on soluble derivatives due to their processing advantage for large-area, low manufacturing cost applications. The novelty of the proposed work originates from our recent study where the first solution-processed, air-stable n-channel fullerene transistors have been demonstrated. To the best of our knowledge, this unique combination of solubility, ambient stability and electron transporting character has only been demonstrated previously in two organic molecules and can be considered as a significant breakthrough. The subject of the proposed work is very topical with huge technological importance in the area of organic electronics and it is anticipated to have significant impact both in academic research and industrial R&D worldwide.