TeraHertz Planar Gunn Diodes

太赫兹平面耿氏二极管

• 批准号: EP/F009259/1
• 负责人: G Dunn
• 金额: $ 29.19万
• 依托单位: University of Aberdeen
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2008
• 资助国家: 英国
• 起止时间: 2008 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FF009259%2F1
• 关键词: TeraHertz; Planar; Gunn; Diodes

THz technology is a very new and exciting frontier in science and engineering. A vast number of potential applications ranging from superior high resolution RADAR systems for both military and civilian use to medical diagnostic aids for treatment of bed sores, skin cancer and burns, wireless office communications and even archaeological and astronomical applications have been proposed. The medical applications are particularly exciting and are attracting much media attention, THz radiation having already been dubbed T-Rays by the press.This project proposes the development of just such a source of THz radiation - a novel form of Planar Gunn diode. This device has already been physically realized and a patent application (No. 0608515.3) filed (under a Scottish Enterprise Proof of Concept award). This grant proposal seeks to develop the full potential of the device, exploring and exploiting its unusual geometry which makes it ideally suited to integration in MMIC circuitry in contrast to conventional Gunn diodes, increasing its power and developing the technology to the point where it will be taken up by British industry.

太赫兹技术是科学和工程中一个非常新的和令人兴奋的前沿。已经提出了大量潜在的应用，从军用和民用的高级高分辨率雷达系统，到治疗压疮、皮肤癌和烧伤的医疗诊断辅助设备，无线办公通信，甚至考古和天文应用。医疗应用特别令人兴奋，吸引了很多媒体的注意，太赫兹辐射已经被媒体称为T-射线。这个项目提出了开发这样一种太赫兹辐射源--一种新型的平面体效应二极管。该设备已经实际实现，并提交了专利申请(编号0608515.3)(根据苏格兰企业概念验证奖)。这项拨款提案旨在开发该器件的全部潜力，探索和利用其不同寻常的几何结构，使其与传统的耿氏二极管相比，非常适合在MMIC电路中集成，从而增加其功率并将技术发展到将被英国工业采用的地步。

项目成果

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

• DOI: 10.1063/1.4868705
• 发表时间: 2014-03
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: A. Khalid;G. Dunn;R. F. Macpherson;S. Thoms;D. Macintyre;Chong Li;M. Steer;V. Papageorgiou;I. Thayne;Martin Kuball;C. Oxley;M. M. Bajo-M.;A. Stephen;J. Glover;D. Cumming

IEEE Transactions on Electron Devices

IEEE 电子器件汇刊

• 期刊: NA
• 作者: G Dunn (Author)

Contact shaping in planar Gunn diodes

平面耿氏二极管中的接触成形

• DOI: 10.1002/pssc.201000539
• 发表时间: 2010
• 期刊: physica status solidi c
• 作者: Pilgrim N