Defect reduction in GaN using the in-situ growth of transition metal nitride layers

利用过渡金属氮化物层的原位生长减少 GaN 的缺陷

基本信息

  • 批准号:
    EP/F019076/1
  • 负责人:
  • 金额:
    $ 1.81万
  • 依托单位:
  • 依托单位国家:
    英国
  • 项目类别:
    Research Grant
  • 财政年份:
    2007
  • 资助国家:
    英国
  • 起止时间:
    2007 至 无数据
  • 项目状态:
    已结题

项目摘要

Red, yellow and green LEDs based on GaAs and related materials have been available since the 1960s. However, wide band gap semiconductors suitable for blue LEDs were difficult to develop and the first efficient, long-lifetime blue GaN-based LED was not fabricated until 1993. This revolutionised the field of solid-state lighting and kick-started a considerable research effort focusing on GaN and related materials. However, it soon became clear that high densities of threading dislocations in the GaN films were severely limiting the performance of GaN-based devices that emit in the violet and UV region. Much research effort has therefore been focused on dislocation density reduction, in an effort to develop efficient violet and UV-emitting LEDs and lasers. These emitters are useful in their own right for water sterilisation, data storage and communications, but are also needed for white LEDs, which are commonly based on the combination of a violet or UV LED and phosphors which convert the short-wavelength light into an appropriate mixture of red, green and blue wavelengths. If the performance of white LEDs can be improved via defect reduction, then solid-state lighting with a luminous efficacy and lifetime considerably better than conventional technology will result. Such an initiative is particularly important in light of a recent EU announcement regarding the banning of sale of conventional light bulbs. We believe that bright, white LEDs offer the best solution for lighting the UK; fluorescent energy-saving bulbs contain harmful metals such as mercury (creating a waste disposal problem), are large in size and often provide poor colour rendering. The aim of our short proposed project is therefore to reduce or eliminate (a) threading dislocations in hexagonal GaN (a form of GaN particularly suitable for LEDs) and (b) stacking faults in cubic GaN (a form of GaN particularly suitable for lasers). This ambitious aim is prompted by our initial research, which indicated that novel transition metal nitride interlayers have the ability to block such dislocations from propagating into the active light-emitting region of a device. We intend to develop this concept by growing such layers in-situ in a single growth process using the same technique that is used to grow the GaN, namely MOCVD for hexagonal GaN or MBE for cubic GaN. This is expected to provide both practical benefits (no interruption of the growth process, as was previously required) and to provide significant improvements in dislocation density reduction via improvement in the roughness of the layers, among other factors. However, we also intend this work to pave the way for integration of transition metal nitrides with GaN devices, which could improve LED contact technology, improve buffer layer technology and allow superconducting TM-nitride/insulating GaN heterostructures (Josephson junctions) of high structural quality to be fabricated, leading to application such as ultra-sensitive magnetometers for use in healthcare and geophysics.
自20世纪60年代以来,基于砷化镓和相关材料的红色,黄色和绿色led已经可用。然而,适合蓝色LED的宽带隙半导体很难开发,直到1993年才制造出第一个高效,长寿命的蓝色gan基LED。这彻底改变了固态照明领域,并启动了一项相当大的研究工作,重点是氮化镓和相关材料。然而,人们很快就发现,氮化镓薄膜中高密度的螺纹位错严重限制了氮化镓基器件在紫罗兰和紫外线区域发射的性能。因此,许多研究工作都集中在降低位错密度上,努力开发高效的紫色和紫外线发光二极管和激光器。这些发射器本身对水消毒、数据存储和通信都很有用,但白光LED也需要这些发射器,白光LED通常是基于紫色或UV LED和荧光粉的组合,荧光粉将短波长的光转换成红、绿、蓝波长的适当混合物。如果白光led的性能可以通过减少缺陷而得到改善,那么固态照明的光效和寿命将大大优于传统技术。鉴于欧盟最近宣布禁止销售传统灯泡,这一举措尤为重要。我们相信,明亮的白色led为英国照明提供了最佳解决方案;荧光节能灯泡含有有害金属,如汞(造成废物处理问题),体积大,通常显色性差。因此,我们提出的短期项目的目的是减少或消除(a)六边形GaN(一种特别适合led的GaN形式)中的螺纹位错和(b)立方GaN(一种特别适合激光的GaN形式)中的堆叠错误。我们最初的研究表明,新型过渡金属氮化物中间层有能力阻止这种位错传播到器件的主动发光区域,从而促进了这一雄心勃勃的目标。我们打算通过使用与生长GaN相同的技术在单一生长过程中原位生长这些层来发展这一概念,即六边形GaN的MOCVD或立方GaN的MBE。预计这将提供实际的好处(不中断生长过程,正如以前所要求的那样),并通过改善层的粗糙度,以及其他因素,显著改善位错密度的降低。然而,我们也打算这项工作为过渡金属氮化物与GaN器件的集成铺平道路,这可以改善LED接触技术,改进缓冲层技术,并允许制造高结构质量的超导tm氮化物/绝缘GaN异质结构(约瑟夫森结),从而导致应用,如用于医疗保健和地球物理学的超灵敏磁力计。

项目成果

期刊论文数量(2)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Growth of ScN Films Grown by Radio-Frequency Molecular Beam Epitaxy
射频分子束外延生长 ScN 薄膜
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    N/a Hall
  • 通讯作者:
    N/a Hall
Growth of epitaxial thin films of scandium nitride on 100-oriented silicon
  • DOI:
    10.1016/j.jcrysgro.2008.01.045
  • 发表时间:
    2008-05
  • 期刊:
  • 影响因子:
    1.8
  • 作者:
    M. Moram;S. Novikov;A. Kent;C. Nörenberg;C. T. Foxon;C. Humphreys
  • 通讯作者:
    M. Moram;S. Novikov;A. Kent;C. Nörenberg;C. T. Foxon;C. Humphreys
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Anthony Kent其他文献

Development of novel lubricant formulation for cleanroom and vacuum application
用于洁净室和真空应用的新型润滑剂配方的开发
  • DOI:
    10.1038/s41598-025-97285-9
  • 发表时间:
    2025-05-02
  • 期刊:
  • 影响因子:
    3.900
  • 作者:
    Fabian Schüler;Andreas Keller;Markus Grebe;Anthony Kent;Michael Buttery;Malgorzata Holynska
  • 通讯作者:
    Malgorzata Holynska
Examining the structure of the fashion industry in Ghana in ensuring the successful adoption of sustainable approach
检查加纳时装业的结构,以确保成功采用可持续方法
EPMA-World Congress 2015
  • DOI:
    10.1186/s13167-016-0054-6
  • 发表时间:
    2016-05-01
  • 期刊:
  • 影响因子:
    5.900
  • 作者:
    Jella-Andrea Abraham;Olga Golubnitschaja;Ildar Akhmetov;Russell J. Andrews;Leonidas Quintana;Russell J. Andrews;Babak Baban;Jun Yao Liu;Xu Qin;Tailing Wang;Mahmood S. Mozaffari;Viktoriia V. Bati;Tamara V. Meleshko;Olga B. Levchuk;Nadiya V. Boyko;Joanna Bauer;Ewa Boerner;Halina Podbielska;Alojz Bomba;Viktor O. Petrov;Volodymyr G. Drobnych;Rostyslav V. Bubnov;Oksana M. Bykova;Nadiya V. Boyko;Hans-Peter Brunner-La Rocca;Lutz Fleischhacker;Olga Golubnitschaja;Frank Heemskerk;Thomas Helms;Tiny Jaarsma;Judita Kinkorová;Jan Ramaekers;Peter Ruff;Ivana Schnur;Emilio Vanoli;Jose Verdu;Hans-Peter Brunner-La Rocca;Rostyslav V. Bubnov;Sergiy A. Grabovetskyi;Olena M. Mykhalchenko;Natalia O. Tymoshok;Oleksandr B. Shcherbakov;Igor P. Semeniv;Mykola Y. Spivak;Rostyslav V. Bubnov;Tetyana V. Ostapenko;Rostyslav V. Bubnov;Nazarii M. Kobyliak;Nadiya M. Zholobak;Mykola Ya. Spivak;John Paul Cauchi;Dmitrii Cherepakhin;Marina Bakay;Artem Borovikov;Sergey Suchkov;Barbara Cieślik;Agnieszka Migasiewicz;Maria-Luiza Podbielska;Markus Pelleter;Agnieszka Giemza;Halina Podbielska;Sebahattin Cirak;Marzia Del Re;Paola Bordi;Valentina Citi;Marta Palombi;Carmine Pinto;Marcello Tiseo;Romano Danesi;Lukas Einhorn;Judit Fazekas;Martina Muhr;Alexandra Schoos;Lucia Panakova;Ina Herrmann;Krisztina Manzano-Szalai;Kumiko Oida;Edda Fiebiger;Josef Singer;Erika Jensen-Jarolim;Arpiné A. Elnar;Nadia Ouamara;Nadiya Boyko;Xavier Coumoul;Jean-Philippe Antignac;Bruno Le Bizec;Gauthier Eppe;Jenny Renaut;Torsten Bonn;Cédric Guignard;Margherita Ferrante;Maria Liusa Chiusano;Salvatore Cuzzocrea;Gerard O’Keeffe;John Cryan;Michelle Bisson;Amina Barakat;Ihsane Hmamouchi;Nasser Zawia;Anumantha Kanthasamy;Glen E. Kisby;Rui Alves;Oscar Villacañas Pérez;Kim Burgard;Peter Spencer;Norbert Bomba;Martin Haranta;Nina Zaitseva;Irina May;Stéphanie Grojean;Mathilde Body-Malapel;Florencia Harari;Raul Harari;Kristina Yeghiazaryan;Olga Golubnitschaja;Vittorio Calabrese;Christophe Nemos;Rachid Soulimani;Maria E. Evsevyeva;Elena A. Mishenko;Zurida V. Kumukova;Evgeniy V. Chudnovsky;Tatyana A. Smirnova;Maria E. Evsevyeva;Ludmila V. Ivanova;Michail V. Eremin;Maria V. Rostovtseva;Maria E. Evsevyeva;Michail V. Eremin;Vladimir I. Koshel;Oksana V. Sergeeva;Nadesgda M. Konovalova;Shantanu Girotra;Olga Golubnitschaja;Olga Golubnitschaja;Manuel Debald;Walther Kuhn;Kristina Yeghiazaryan;Rostyslav V. Bubnov;Vadym M. Goncharenko;Ulyana Lushchyk;Godfrey Grech;Katarzyna Konieczka;Olga Golubnitschaja;Jan Jaap Erwich;Vincenzo Costigliola;Kristina Yeghiazaryan;Ulrich Gembruch;Vadym M. Goncharenko;Vasyl O. Beniuk;Olga V. Kalenska;Rostyslav V. Bubnov;Vadym M. Goncharenko;Vasyl O. Beniuk;Rostyslav V. Bubnov;Olga Melnychuk;Irina A. Gorbacheva;Lyudmila Y. Orekhova;Vadim V. Tachalov;Olena I. Grechanyk;Rizvan Ya. Abdullaiev;Rostyslav V. Bubnov;Suzanne Hagan;Eilidh Martin;Ian Pearce;Katherine Oliver;Cenk Haytac;Fariz Salimov;Servin Yoksul;Anatoly A. Kunin;Natalia S. Moiseeva;Bernardo Herrera-Imbroda;Sergio del Río-González;Maria Fernanda Lara;Antonia Angulo;Francisco Javier Machuca Santa-Cruz;Bernardo Herrera-Imbroda;Sergio del Río-González;Maria Fernanda Lara;John Ionescu;Alfiya Z. Isamulaeva;Anatoly A. Kunin;Shamil Sh. Magomedov;Aida I. Isamulaeva;Tatjana Josifova;Marko Kapalla;Juraj Kubáň;Olga Golubnitschaja;Vincenzo Costigliola;Vincenzo Costigliola;Marko Kapalla;Juraj Kubáň;Olga Golubnitschaja;Anthony Kent;Tom Fisher;Tilak Dias;Judita Kinkorová;Ondřej Topolčan;Matthias Kohl;Anatoly A. Kunin;Natalia S. Moiseeva;Andrii I. Kurchenko;Vasyl A. Beniuk;Vadym M. Goncharenko;Rostyslav V. Bubnov;Nadiya V. Boyko;Andriy M. Strokan;Julia Kzhyshkowska;Alexandru Gudima;Ksenia S. Stankevich;Victor D. Filimonov;Harald Klüter;Evgeniya M. Mamontova;Sergei I. Tverdokhlebov;Ulyana B. Lushchyk;Viktor V. Novytskyy;Igor P. Babii;Nadiya G. Lushchyk;Lyudmyla S. Riabets;Ivanna I. Legka;Mira Marcus-Kalish;Alexis Mitelpunkt;Tal Galili;Neta Shachar;Yoav Benjamini;Agnieszka Migasiewicz;Markus Pelleter;Joanna Bauer;Ewelina Dereń;Halina Podbielska;Natalia S. Moiseeva;Anatoly A. Kunin;Dmitry A. Kunin;Natalia S. Moiseeva;Yury A. Ippolitov;Dmitry A. Kunin;Alexei N. Morozov;Natalia V. Chirkova;Nakhid T. Aliev;Mahmood S. Mozaffari;Jun Yao Liu;Babak Baban;Mahmood S. Mozaffari;Jun Yao Liu;Rafik Abdelsayed;Xing-Ming Shi;Babak Baban;Jaroslav Novák;Milan Štork;Václav Zeman;Wytze P. Oosterhuis;Elvar Theodorsson;Lyudmila Y. Orekhova;Tatyana V. Kudryavtseva;Elena R. Isaeva;Vadim V. Tachalov;Ekaterina S. Loboda;Mario Pazzagli;Francesca Malentacchi;Irene Mancini;Ivan Brandslund;Pieter Vermeersch;Matthias Schwab;Janja Marc;Ron H. N. van Schaik;Gerard Siest;Elvar Theodorsson;Chiara Di Resta;Matus Pleva;Jozef Juhar;Matus Pleva;Jozef Juhar;Jiří Polívka jr.;Filip Janků;Martin Pešta;Jan Doležal;Milena Králíčková;Jiří Polívka;Jiří Polívka;Alena Lukešová;Nina Müllerová;Petr Ševčík;Vladimír Rohan;Kneginja Richter;Lence Miloseva;Günter Niklewski;Kneginja Richter;Jens Acker;Guenter Niklewski;Olga Safonicheva;Vincenzo Costigliola;Olga Safonicheva;Maxim Sautin;Janna Sinelnikova;Sergey Suchkov;Songül Secer;Stephan von Bandemer;Niva Shapira;Aleksandr Shcherbakov;Anatoly A. Kunin;Natalia S. Moiseeva;Bogdan R. Shumilovich;Zhanna Lipkind;Yulia Vorobieva;Dmitry A. Kunin;Anastasiia V. Sudareva;Ivica Smokovski;Tatjana Milenkovic;Arturo Solís-Herrera;María del Carmen Arias-Esparza;Sergey Suchkov;Krishna Chander Sridhar;Olga Golubnitschaja;Maria Studneva;Sihong Song;James Creeden;Мark Мandrik;Sergey Suchkov;Elvar Theodorsson;Syed A. M. Tofail;Ondřej Topolčan;Judita Kinkorová;Ondřej Fiala;Marie Karlíková;Šárka Svobodová;Radek Kučera;Radka Fuchsová;Vladislav Třeška;Václav Šimánek;Ladislav Pecen;Jan Šoupal;Štěpán Svačina;Evgeniya Tretyak;Maria Studneva;Sergey Suchkov;Francesca M. Trovato;Giuseppe Fabio Martines;Daniela Brischetto;Daniela Catalano;Giuseppe Musumeci;Guglielmo M. Trovato;George Th. Tsangaris;Athanasios K. Anagnostopoulos;George Th. Tsangaris;Athanasios K. Anagnostopoulos;José Verdú;German Gutiérrez;Jordi Rovira;Marta Martinez;Lutz Fleischhacker;Donna Green;Arthur Garson;Elena Tamburini;Stefano Cuomo;Juan Martinez-Leon;Teresa Abrisqueta;Hans-Peter Brunner-La Rocca;Tiny Jaarsma;Teresa Arredondo;Cecilia Vera;Giuseppe Fico;Olga Golubnitschaja;Fernando Arribas;Martina Onderco;Isabel Vara;José Verdú;Francesco Sambo;Barbara Di Camillo;Claudio Cobelli;Andrea Facchinetti;Giuseppe Fico;Riccardo Bellazzi;Lucia Sacchi;Arianna Dagliati;Daniele Segnani;Valentina Tibollo;Manuel Ottaviano;Rafael Gabriel;Leif Groop;Jacqueline Postma;Antonio Martinez;Liisa Hakaste;Tiinamaija Tuomi;Konstantia Zarkogianni;Igor Volchek;Nina Pototskaya;Andrey Petrov;Igor Volchek;Nadezhda Pototskaya;Andrey Petrov;Ülle Voog-Oras;Oksana Jagur;Edvitar Leibur;Priit Niibo;Triin Jagomägi;Minh Son Nguyen;Chris Pruunsild;Dagmar Piikov;Mare Saag;Wei Wang;Wei Wang;Andreas Weinhäusel;Walter Pulverer;Matthias Wielscher;Manuela Hofner;Christa Noehammer;Regina Soldo;Peter Hettegger;Istvan Gyurjan;Ronald Kulovics;Silvia Schönthaler;Gabriel Beikircher;Albert Kriegner;Stephan Pabinger;Klemens Vierlinger;Ayşe Yüzbaşıoğlu;Meral Özgüç
  • 通讯作者:
    Meral Özgüç
Co-Designing for Care: Craft and Wearable Wellbeing
护理协同设计:工艺和可穿戴健康
  • DOI:
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Anthony Kent;Peta Bush
  • 通讯作者:
    Peta Bush
The role of developing countries in the global fashion industry sustainability discourse: Ghana in perspective - A narrative review
发展中国家在全球时尚业可持续发展话语中的作用:加纳视角 - 叙述性回顾

Anthony Kent的其他文献

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{{ truncateString('Anthony Kent', 18)}}的其他基金

Acoustic control of quantum cascade heterostructures: the THz "S-LASER"
量子级联异质结构的声学控制:太赫兹“S-LASER”
  • 批准号:
    EP/V004751/1
  • 财政年份:
    2021
  • 资助金额:
    $ 1.81万
  • 项目类别:
    Research Grant
Acoustoelectric Methods for the Generation Manipulation and Detection of THz Radiation
用于产生操纵和检测太赫兹辐射的声电方法
  • 批准号:
    EP/M016161/1
  • 财政年份:
    2015
  • 资助金额:
    $ 1.81万
  • 项目类别:
    Research Grant
Design Management Metamorphosis Network
设计管理变形网络
  • 批准号:
    AH/H018484/1
  • 财政年份:
    2010
  • 资助金额:
    $ 1.81万
  • 项目类别:
    Research Grant
Terahertz acoustic laser (saser) devices: fabrication and characterisation
太赫兹声学激光(saser)设备:制造和表征
  • 批准号:
    EP/G035202/1
  • 财政年份:
    2009
  • 资助金额:
    $ 1.81万
  • 项目类别:
    Research Grant

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CAS:Improving the Activity of Homogeneous Mn Catalysts for the Oxygen Reduction Reaction
CAS:提高均相锰催化剂的氧还原反应活性
  • 批准号:
    2348515
  • 财政年份:
    2024
  • 资助金额:
    $ 1.81万
  • 项目类别:
    Standard Grant
The Role of Ethnic Racial Discrimination on the Development of Anxious Hypervigilance in Latina Youth
民族种族歧视对拉丁裔青少年焦虑过度警觉的影响
  • 批准号:
    10752122
  • 财政年份:
    2024
  • 资助金额:
    $ 1.81万
  • 项目类别:
Effect of Reynolds number on drag reduction: from near-wall cycle to large-scale motions.
雷诺数对减阻的影响:从近壁循环到大规模运动。
  • 批准号:
    2345157
  • 财政年份:
    2024
  • 资助金额:
    $ 1.81万
  • 项目类别:
    Standard Grant
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