Domain wall nanoelectronics : The wall is the device

畴壁纳米电子学：壁就是器件

• 批准号: DP140100463
• 负责人: Prof Nagarajan Valanoor
• 金额: $ 23.07万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2014
• 资助国家: 澳大利亚
• 起止时间: 2014-01-28 至 2017-06-15
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP140100463
• 关键词: Domain; wall; nanoelectronics; device

This project investigates the nanofabrication and atomic-scale manipulation of domain walls in multiferroic oxide thin films. Proximal scanning probe writing in conjunction with nanolithography is exploited to precisely engineer domain wall configurations, to be used as functional elements. The experiments will be supported by the multiscale modeling theory of multiferroics. Domain wall control and engineering is proposed as the new paradigm for multiferroics used in future nanoelectronic devices.

本计画主要研究多重铁性氧化物薄膜中之奈米尺度及原子尺度之畴壁操控。近端扫描探针写入结合纳米光刻被利用来精确地设计畴壁配置，以用作功能元件。实验将得到多铁性材料多尺度模型理论的支持。畴壁控制和工程被认为是多铁性材料在未来纳米电子器件中应用的新范例。