programmable stimulus generator and multielectrode array to investigate new electrical stimulation protocols for relief from seizure-like activity

可编程刺激发生器和多电极阵列,用于研究新的电刺激方案,以缓解癫痫样活动

基本信息

  • 批准号:
    345450-2007
  • 负责人:
  • 金额:
    $ 5.82万
  • 依托单位:
  • 依托单位国家:
    加拿大
  • 项目类别:
    Research Tools and Instruments - Category 1 (<$150,000)
  • 财政年份:
    2006
  • 资助国家:
    加拿大
  • 起止时间:
    2006-01-01 至 2007-12-31
  • 项目状态:
    已结题

项目摘要

Studies of epilepsy have characterized the electrical activity associated with the onset of seizures in mammals and can be suppressed via the application of an electrical stimulus. It has been shown that the suppression of seizure-like activity varies with the stimulus frequency; at low frequencies the suppression is slow to take effect, but the effect is long-lasting after the stimulus is removed whereas at higher frequencies relief is immediate but does not last as long. This collaboration has already confirmed such data.    The equipment requested in this grant will initially be used to investigate the response of epileptic seizure-like activity in rat hippocampal tissue to a mixed-frequency electrical stimulus. By mixing more than one frequency into the electrical stimulus signal it is anticipated that the benefits of both high and low frequencies may be observed. This is an important study as "Although stimulation for uncontrolled epilepsy with electrodes implanted in the brain itself has been done for many years, the initial claims for therapeutic success have not been confirmed by the very few clinical studies that have been done so far. The best structures to stimulate and the most effective stimuli to use are unknown." ("The Lancet: Neurology", Vol. 3, 2004, pp.111-118). This investigation will take steps to understand the processes behind the suppression of epileptic seizure-like activity and help refine models of neural connectivity that resemble electrical circuits.    The equipment is also critical to longer-term projects that seek to use "system-on-chip" technology to develop electrode arrays with integrated pre-amplification and/or analog-digital conversion hardware. Such enhancements to this equipment are aimed at significantly improving signal/noise ratios. This is an important supporting step for the bresearch community as the neural tissue is gradually affected by the implantation of electrodes and the presence of the electrical stimulus. In essence we are trying help electrophysiologists to obtain useful data quicker than at present. This represents an excellent opportunity for electrical engineering students as they are exposed to an exciting interdisciplinary research environment.
对癫痫的研究已经确定了与哺乳动物癫痫发作相关的电活动,并可以通过施加电刺激来抑制。结果表明,对癫痫样活动的抑制随刺激频率的不同而不同;在低频率下,抑制起效较慢,但在刺激去除后效果持久,而在较高频率下,立即缓解,但不会持续那么长时间。这一合作已经证实了这样的数据。此外,这笔赠款中要求的设备最初将用于研究大鼠海马区组织中癫痫样活动对混频电刺激的反应。通过将多于一个频率混合到电刺激信号中,预计可以观察到高频和低频两者的益处。这是一项重要的研究,因为“虽然在大脑中植入电极来刺激失控癫痫已经进行了很多年,但最初宣称的治疗成功还没有被迄今为止已经完成的极少数临床研究所证实。最好的刺激结构和最有效的刺激手段是未知的。”(《柳叶刀:神经病学》,第3卷,2004年,第111-118页)。这项研究将采取措施了解癫痫样活动抑制背后的过程,并帮助完善类似电路的神经连接模型。他说,这些设备对寻求使用“片上系统”技术开发具有集成前置放大和/或模数转换硬件的电极阵列的较长期项目也至关重要。对该设备的这些改进旨在显著提高信噪比。这对bResearch社区来说是一个重要的支持步骤,因为神经组织逐渐受到电极植入和电刺激的影响。从本质上说,我们正在努力帮助电生理学家比目前更快地获得有用的数据。这对电气工程专业的学生来说是一个极好的机会,因为他们可以接触到一个令人兴奋的跨学科研究环境。

项目成果

期刊论文数量(0)
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Oliver, Derek其他文献

A Finite Element Analysis Model for Internal Partial Discharges in an Air-Filled, Cylindrical Cavity inside Solid Dielectric
固体电介质内部充气圆柱形腔内部局部放电的有限元分析模型
  • DOI:
    10.1109/eic49891.2021.9612268
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Borghei, Moein;Ghassemi, Mona;Kordi, Behzad;Gill, Puneet;Oliver, Derek
  • 通讯作者:
    Oliver, Derek
Modeling and Measurement of Internal Partial Discharges in Voids Artificially Made within 3D-Printed Polylactic Acid (PLA) Block
3D 打印聚乳酸 (PLA) 块内人工制造的空隙中内部局部放电的建模和测量

Oliver, Derek的其他文献

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{{ truncateString('Oliver, Derek', 18)}}的其他基金

P-N and P-i-N junction silicon microwire arrays for solar energy conversion
用于太阳能转换的 P-N 和 P-i-N 结硅微线阵列
  • 批准号:
    RGPIN-2018-04965
  • 财政年份:
    2022
  • 资助金额:
    $ 5.82万
  • 项目类别:
    Discovery Grants Program - Individual
P-N and P-i-N junction silicon microwire arrays for solar energy conversion
用于太阳能转换的 P-N 和 P-i-N 结硅微线阵列
  • 批准号:
    RGPIN-2018-04965
  • 财政年份:
    2021
  • 资助金额:
    $ 5.82万
  • 项目类别:
    Discovery Grants Program - Individual
P-N and P-i-N junction silicon microwire arrays for solar energy conversion
用于太阳能转换的 P-N 和 P-i-N 结硅微线阵列
  • 批准号:
    RGPIN-2018-04965
  • 财政年份:
    2020
  • 资助金额:
    $ 5.82万
  • 项目类别:
    Discovery Grants Program - Individual
P-N and P-i-N junction silicon microwire arrays for solar energy conversion
用于太阳能转换的 P-N 和 P-i-N 结硅微线阵列
  • 批准号:
    RGPIN-2018-04965
  • 财政年份:
    2019
  • 资助金额:
    $ 5.82万
  • 项目类别:
    Discovery Grants Program - Individual
P-N and P-i-N junction silicon microwire arrays for solar energy conversion
用于太阳能转换的 P-N 和 P-i-N 结硅微线阵列
  • 批准号:
    RGPIN-2018-04965
  • 财政年份:
    2018
  • 资助金额:
    $ 5.82万
  • 项目类别:
    Discovery Grants Program - Individual
Sub-micron dielectric spectroscopy of composite polymer membranes and interfaces for alternative energy applications
用于替代能源应用的复合聚合物膜和界面的亚微米介电谱
  • 批准号:
    249677-2012
  • 财政年份:
    2015
  • 资助金额:
    $ 5.82万
  • 项目类别:
    Discovery Grants Program - Individual
Sub-micron dielectric spectroscopy of composite polymer membranes and interfaces for alternative energy applications
用于替代能源应用的复合聚合物膜和界面的亚微米介电谱
  • 批准号:
    249677-2012
  • 财政年份:
    2014
  • 资助金额:
    $ 5.82万
  • 项目类别:
    Discovery Grants Program - Individual
Research partnership meeting with Tony Carreira (K-Line Insulators Ltd)
与 Tony Carreira(K-Line Insulators Ltd)举行研究合作会议
  • 批准号:
    464600-2014
  • 财政年份:
    2014
  • 资助金额:
    $ 5.82万
  • 项目类别:
    Interaction Grants Program
Sub-micron dielectric spectroscopy of composite polymer membranes and interfaces for alternative energy applications
用于替代能源应用的复合聚合物膜和界面的亚微米介电谱
  • 批准号:
    249677-2012
  • 财政年份:
    2013
  • 资助金额:
    $ 5.82万
  • 项目类别:
    Discovery Grants Program - Individual
Development of processing techniques for MOSFET structures based on migration-enhanced epitaxially-grown thin film layers
基于迁移增强外延生长薄膜层的 MOSFET 结构加工技术的开发
  • 批准号:
    431204-2012
  • 财政年份:
    2012
  • 资助金额:
    $ 5.82万
  • 项目类别:
    Engage Grants Program

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