Fabrication and analyses of intermixing in InGaAs/InGaAsP and InGaAsP/InP quantum welld and their use in intermixed quantum-well lasers and integrated laser-modulator structures

InGaAs/InGaAsP 和 InGaAsP/InP 量子阱混合的制造和分析及其在混合量子阱激光器和集成激光调制器结构中的应用

• 批准号: 42570-2007
• 负责人: Simmons, John
• 金额: $ 1.98万
• 依托单位: McMaster University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2007
• 资助国家: 加拿大
• 起止时间: 2007-01-01 至 2008-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=364027
• 关键词: Fabrication; analyses; intermixing; InGaAs; InGaAsP

Quantum-well intermixing relies on the creation of non-equilibrium concentrations of point defects that diffuse through the quantum wells and adjacent barrier layers during thermal-anneal treatment, causing changes in the quantum-well dimensions and composition. At present there are few direct compositional studies that look into redistribution of material inside quantum- well structures due to intermixing. It is proposed to use analytical electron microscopy to determine the compositional and morphological changes induced by quantum well intermixing in order to fabricate InP and GaAs-based quantum-well structures with spatial wavelength characteristics. The ability to observe temperature-dependent changes in the compositional profiles will permit the direct measurement of the diffusion of elements due to quantum-well intermixing and to determine the activation energies of the process. The effective diffusion coefficients obtained from the concentration profiles of annealed samples will lead to better understanding of the particular diffusion mechanism for each particular system (i.e. the substitutional-interstitial and the vacancy mechanisms under intrinsic point defect equilibrium and non-equilibrium conditions). Results will be compared with theoretical calculations based on photoluminescent- wavelength shift and, therefore, will significantly improve our knowledge of the diffusion and interdiffusion mechanisms that take place in semiconductor materials.The objective of this work is to tailor the optical properties of the materials in order to produce optoelectronic devices for use in a range of optoelectronic applications such as medical diagnostics and integrated optoelectronics. In particular, we will be initially concerned with the fabrication and processing of ridge-type integrated laser-modulator modules, which have potential applications in a wide range of high-speed optical-signal processing equipment. Later we will extend these studies to include integrated distributed feedback laser-modulator modules  Also, we will continue our studies on the reproducibility and long-term reliability of optoelectronic devices, and apply the knowledge to evaluate our fabricated devices.

量子井混合依赖于点缺陷的非平衡浓度的产生，这些点缺陷在热退火处理期间扩散通过量子井和相邻的势垒层，导致量子井尺寸和成分的变化。目前，很少有直接的成分研究着眼于由于混合而导致的量子阱结构中材料的重新分布。为了制备具有空间波长特性的InP和GaAs基量子阱结构，提出了用分析电子显微镜来研究量子阱混合引起的成分和形貌的变化。观察成分分布随温度变化的能力将允许直接测量由于量子井混合而引起的元素扩散，并确定过程的激活能。从样品的浓度分布得到的有效扩散系数将有助于更好地理解每个特定系统的特定扩散机制(即在本征点缺陷平衡和非平衡条件下的置换-间隙和空位机制)。结果将与基于光致发光波长移动的理论计算进行比较，因此，将显著提高我们对半导体材料中发生的扩散和互扩散机制的了解。这项工作的目的是定制材料的光学性质，以生产用于医疗诊断和集成光电子学等一系列光电子学应用的光电子器件。特别是，我们将首先关注脊型集成激光调制器模块的制造和加工，这些模块在各种高速光学信号处理设备中具有潜在的应用。稍后，我们将扩展这些研究，以包括集成的分布式反馈激光调制器模块。此外，我们还将继续研究光电子器件的重复性和长期可靠性，并应用这些知识来评估我们制造的器件。