Quantum-dot semiconductor waveguide gain materials and their applications

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The technological realization of high-quality and high-density InAs-based self-assembled quantum-dot (QD) semiconductor gain material around 1550 nm offers many new possibilities. As compared with the conventional bulk / quantum-well (QW) based semiconductor or rare-earth-doped fiber gain materials, the advantages of the QD-based waveguide gain materials are: much broader spectral bandwidths, low lasing threshold current densities, high temperature stability, strongly reduced linewidth enhancement factor, small power consumption, large saturated output power, low chirp behaviors at high speed modulation, much better back-reflection insensitivity, independent multi-wavelength and pattern-free amplification. The significance of this proposal is that utilizing the above mentioned special properties /advantages to develop novel QD-based semiconductor waveguide devices and their applications.