O-Band Monolithic Quantum Dot Semiconductor Optical Amplifier on COMS-Compatible Silicon

COMS 兼容硅上的 O 波段单片量子点半导体光放大器

• 批准号: 2097441
• 金额: --
• 依托单位: University College London
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2097441
• 关键词: Band; Monolithic; Quantum; Dot; Semiconductor

The PhD candidate's vision is to develop the world's first semiconductor optical amplifier (SOA) on silicon substrates by epitaxial growth methods. This EPSRC DTP studentship award aims to jointly investigate quantum dot (QD) gain region technology, advanced epitaxy and high-end nano-fabrication techniques to develop InAs QD SOAs monolithically grown on complementary metal-oxide-semiconductor (CMOS)-compatible on-axis silicon (001) substrates for silicon photonics. In contrast to conventional native substrates based SOAs or Si-based III-V SOAs using either flip-chip bonding or wafer bonding, the proposed method is fundamentally different, since the PhD candidate aims to develop high-performance III-V SOAs directly on CMOS-compatible silicon (001), opening up the possibility to achieve high-yield, low-cost and large-scale silicon-based photonic integrated circuits (PICs) by leveraging the mature fabrication tools and processes developed by the CMOS industry.The proposed study concerns a 36-month experimental study, where the EPSRC DTP PhD student be trained to undertake modelling, most of the device fabrication and characterisation, and analysis work. The topic is within the silicon-based Information and Communication Technology (ICT) Research, which is at the heart of the modern data revolution and addresses the EPSRC Cross-ICT Priorities 2017 - 2020 and fits the Cross-ICT areas, Cross-Disciplinary and Co-Creation. The significance of this proposal should not be underestimated; if the research challenges/objectives discussed in this proposal are not fulfilled, silicon-based PICs will not reach its full potential that is predicted.

这位博士生的愿景是通过外延生长方法在硅衬底上开发世界上第一个半导体光放大器（SOA）。 EPSRC DTP 学生奖学金旨在共同研究量子点 (QD) 增益区技术、先进外延和高端纳米制造技术，以开发在互补金属氧化物半导体 (CMOS) 兼容的轴上硅 (001) 衬底上单片生长的 InAs QD SOAs，用于硅光子学。与使用倒装芯片键合或晶圆键合的传统基于原生衬底的 SOA 或基于硅的 III-V SOA 相比，所提出的方法有本质上的不同，因为博士生的目标是直接在 CMOS 兼容硅 (001) 上开发高性能 III-V SOA，从而为实现高产量、低成本和大规模硅基光子集成电路提供了可能性 （PIC）利用 CMOS 行业开发的成熟制造工具和工艺。拟议的研究涉及一项为期 36 个月的实验研究，其中 EPSRC DTP 博士生接受培训以进行建模、大部分器件制造和表征以及分析工作。该主题属于基于硅的信息和通信技术 (ICT) 研究，该研究是现代数据革命的核心，解决了 EPSRC 2017 - 2020 年跨 ICT 优先事项，适合跨 ICT 领域、跨学科和共同创造。这一建议的意义不容低估；如果本提案中讨论的研究挑战/目标没有实现，硅基 PIC 将无法充分发挥预期的潜力。