Maximizing yield in nanometer circuits using a design-for-manufacturability approach
Maximizing yield in nanometer circuits using a design-for-manufacturability approach
批准号:
262735-2009
负责人:
Anis, Mohab
金额:
$3.35万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2010
资助国家:
加拿大
项目状态:
已结题
起止时间:
2010-01-01 至 2011-12-31
中文摘要
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英文摘要
As the silicon industry moves towards nanometre designs, one of the most important design challenges is the increasing variability in device characteristics. Device variations significantly impact the chips' performance, power budget and ultimately its yield. The proposed research investigates the design of novel integrated circuits and design automation methodologies while maximizing chips' yield.
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Maximizing yield in nanometer circuits using a design-for-manufacturability approach
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批准号:262735-2009
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项目类别:Discovery Grants Program - Individual
-
资助金额:$3.35万
-
财政年份:2009
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负责人:Anis, Mohab
-
依托单位:
Managing leakage power in nanometer VLSI circuit designs
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批准号:262735-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2008
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负责人:Anis, Mohab
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依托单位:
Managing leakage power in nanometer VLSI circuit designs
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批准号:262735-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2007
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负责人:Anis, Mohab
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依托单位:
Managing leakage power in nanometer VLSI circuit designs
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批准号:262735-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2006
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负责人:Anis, Mohab
-
依托单位:
Managing leakage power in nanometer VLSI circuit designs
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批准号:262735-2004
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项目类别:Discovery Grants Program - Individual
-
资助金额:$1.6万
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财政年份:2005
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负责人:Anis, Mohab
-
依托单位:
Managing leakage power in nanometer VLSI circuit designs
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批准号:262735-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.6万
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财政年份:2004
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负责人:Anis, Mohab
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依托单位:
PGSB
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批准号:244725-2001
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项目类别:Postgraduate Scholarships
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资助金额:$1.04万
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财政年份:2002
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负责人:Anis, Mohab
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依托单位:
PGSB
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批准号:244725-2001
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项目类别:Postgraduate Scholarships
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资助金额:$1.39万
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财政年份:2001
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负责人:Anis, Mohab
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依托单位:
海外基金