Controlling and Characterizing the Conductivity and Materials Quality of CVD-grown h-BN

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This work seeks to controllably change the conductivity and carrier mobility in single-atom thick hexagonal boron**nitride materials using heterogenous atoms (called dopants) deposited using ion implantation. These dopants will**be introduce knock-on collisions in the lattice and substitute for missing boron or nitrogen atoms in the lattice. In**order to measure whether we successfully incorporated these atoms, we look at the change in the electrical**conductivity and optical properties as a function of ion dose, and image the dopant atoms at the atomic scale**using high-resolution transmission electron microscopy and electron energy-loss spectroscopy. If successful, we**will have direct as well as inferential proof of incorporation and have a good estimate of the controllability of this**process. This will add another product to the high-quality 2-D materials manufactured by Kennedy Labs.