Controlling and Characterizing the Conductivity and Materials Quality of CVD-grown h-BN

这项工作旨在可控地改变导电性和载流子迁移率在单原子厚的六方氮化硼材料使用异质原子（称为掺杂剂）沉积使用离子注入。这些掺杂剂将在晶格中引入撞击碰撞，并取代晶格中缺失的硼或氮原子。为了测量我们是否成功地掺入了这些原子，我们研究了电导率和光学性质随离子剂量的变化，并使用高分辨率透射电子显微镜和电子能量损失光谱法在原子尺度上对掺杂剂原子进行成像。如果成功的话，我们将有直接的和推论的证据，并有一个很好的估计这个过程的可控性。这将为肯尼迪实验室制造的高质量2D材料增加另一种产品。

This work seeks to controllably change the conductivity and carrier mobility in single-atom thick hexagonal boron**nitride materials using heterogenous atoms (called dopants) deposited using ion implantation. These dopants will**be introduce knock-on collisions in the lattice and substitute for missing boron or nitrogen atoms in the lattice. In**order to measure whether we successfully incorporated these atoms, we look at the change in the electrical**conductivity and optical properties as a function of ion dose, and image the dopant atoms at the atomic scale**using high-resolution transmission electron microscopy and electron energy-loss spectroscopy. If successful, we**will have direct as well as inferential proof of incorporation and have a good estimate of the controllability of this**process. This will add another product to the high-quality 2-D materials manufactured by Kennedy Labs.