Development of Nanowire Infrared Photodetectors

申请人正在开发基于来自（In，Ga）（As，P）组的III-V族化合物半导体的半导体纳米线。 半导体纳米线是棒状结构，直径小至10 nm，长度为几微米。纳米线已经成为下一代光电器件、传感器和光电探测器的一种有前途的技术。 该提案将开发具有广泛的军事，生物医学，监视，红外天文学和通信应用的红外光电探测器。 与传统的红外光电探测器不同，III-V纳米线可以与传统的Si微电子集成而不会产生缺陷。 在Si成像器阵列上生长的III-V纳米线可以潜在地用作与已建立的Si技术集成的大面积红外探测器。将III-V族化合物集成到已建立的Si阵列中具有优于现有检测器技术的许多益处，包括更小的像素尺寸、更高的像素密度、更高的产量/更简单的工艺/降低的成本，以及利用CMOS成像器技术的最新进展的能力。

The applicants are developing semiconductor nanowires based on III-V compound semiconductors from the group (In,Ga)(As,P). Semiconductor nanowires are rod-like structures with diameters as small as 10 nm, and lengths of several microns. Nanowires have emerged as a promising technology for next generation photovoltaics, sensors, and photodetectors. This proposal will develop nanowire-based infrared photodetectors having a wide range of military, biomedical, surveillance, infrared astronomy, and communications applications. Unlike conventional infrared photodetectors, III-V nanowires may be integrated with conventional Si microelectronics without generating defects. III-V nanowires grown on a Si imager array can potentially function as a large-area infrared detector that is integrated with established Si technologies. Integrating III-V compounds into established Si arrays has many benefits over existing detector technologies, including smaller pixel size, higher pixel density, higher yield / simpler process / reduced cost, and the ability to take advantage of the most recent advances in CMOS imager technology.