Development of Nanowire Infrared Photodetectors

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The applicants are developing semiconductor nanowires based on III-V compound semiconductors from the group (In,Ga)(As,P). Semiconductor nanowires are rod-like structures with diameters as small as 10 nm, and lengths of several microns. Nanowires have emerged as a promising technology for next generation photovoltaics, sensors, and photodetectors. This proposal will develop nanowire-based infrared photodetectors having a wide range of military, biomedical, surveillance, infrared astronomy, and communications applications. Unlike conventional infrared photodetectors, III-V nanowires may be integrated with conventional Si microelectronics without generating defects. III-V nanowires grown on a Si imager array can potentially function as a large-area infrared detector that is integrated with established Si technologies. Integrating III-V compounds into established Si arrays has many benefits over existing detector technologies, including smaller pixel size, higher pixel density, higher yield / simpler process / reduced cost, and the ability to take advantage of the most recent advances in CMOS imager technology.