GOALI: Infrared Nanowire Heterostructures: Fundamentals and Emerging Detector Applications

红外纳米线异质结构：基本原理和新兴的探测器applicationsNontechnical摘要：这项工作是资助下的学术联络与工业（GOALI）领域。 本计画旨在探讨一种红外线主动半导体奈米异质结构在红外线影像侦测器上的应用。 该项目是辛辛那提大学和澳大利亚国立大学的基础科学和工程系教师和学生与专门从事红外探测器设计和制造的L-3/辛辛那提电子公司的研究人员之间的合作。 这些纳米结构可以为跨越1.5微米至10微米的宽波长范围的独特红外探测器和红外成像系统提供基础。 这项研究的首要目标是开发和了解新的纳米线基材料，这将允许广泛的可调谐性和高灵敏度的中波红外，从而提供了一个基础，以制造独特的红外探测器和阵列。 L3/辛辛那提电子公司在复杂红外成像系统的有效设计、表征和制造方面拥有丰富的经验，澳大利亚国立大学的世界级纳米线生长小组以及辛辛那提大学的器件和光学物理小组积极合作，有力地增强了这一提议。 学术机构的学生和教师将接触到企业研究机构应用研究所涉及的动态和复杂性，而L-3/辛辛那提电子公司的工作人员将接触到学术机构的基础科学和技术研究。 技术摘要：该项目旨在研究新发展的一类半导体纳米线异质结构的基本物理特性及其作为独特的红外探测器的新兴应用，其范围从1. 5微米到10微米。这种纳米结构有可能大大提高红外焦平面阵列成像的能力，因为准一维几何形状开辟了新的方法来调整这些材料中的波函数和带隙。这一提议得到了L3/辛辛那提电子公司（在复杂红外成像系统的有效设计和制造方面具有丰富经验）、澳大利亚国立大学世界级纳米线生长小组和加州大学研究小组（在单半导体纳米线的成像和光谱学方面具有丰富经验）之间的积极合作的大力加强。本提案中描述的研究因两项新的发展而引人注目：（1）新开发的生长非常高质量的III-Sb和InAs纳米线和纳米线异质结构的能力，以及（2）我们实验室最近证实，可以以非常高的灵敏度对光激发载流子的复合和弛豫进行单纳米线动态测量。本研究的具体目标是测量锌镓砷锑，铟砷锑和铟镓砷三元合金异质结的能带结构和动力学。 这种调整能带结构以设计新纳米结构的能力将使设计新的红外极灵敏探测器成为可能。 这些纳米结构将被组合，以使敏感的1D和2D红外探测器阵列。 学术机构的学生和教师将接触到企业研究机构应用研究所涉及的动态和复杂性，而L-3/辛辛那提电子公司的工作人员将接触到学术机构的基础科学和技术研究。

Infrared Nanowire Heterostructures: Fundamentals and Emerging Detector ApplicationsNontechnical Abstract:This work is funded under the area of Grant Opportunties for Academic Liaison with Industry (GOALI). This project is to investigate the application of a class of infrared active semiconductor nanowire heterostructures for creation of unique infrared imaging detectors with enhanced sensitivity. This project is a collaboration between the basic science and engineering faculty and students at the University of Cincinnati and Australian National University with the research staff at L-3/Cincinnati Electronics which specializes in the design and manufacture of infrared detectors. These nanostructures may provide the basis for unique infrared detectors and infrared imaging systems spanning a wide wavelength range from 1.5 microns to 10 microns. The overarching goal of this research is to develop and understand new nanowire based materials which will allow broad tunability and high sensitivity over the mid-wave IR and thus provide a foundation to fabricate unique IR detectors and arrays. This proposal is strongly enhanced by an active collaboration among L3/Cincinnati Electronics, with experience in effective design, characterization and manufacture of complex infrared imaging systems, the world-class nanowire growth group at Australian National University, and the device and optical Physics group at the University of Cincinnati. Students and faculty at the academic institutions will be exposed to the dynamics and complexities involved in applied research at a corporate research facility, while the staff at L-3/Cincinnati Electronics will be exposed to the basic science and technological research at an academic institution. Technical Abstract:This project is to investigate the basic physics of a newly grown class of semiconductor nanowire heterostructures and their emerging applications as unique infrared detectors spanning the range from 1.5 microns to 10 microns. Such nanostructures have the potential to substantially enhance the capabilities of infrared focal plane arrays for imaging since the quasi one-dimensional geometry opens up new ways to tune the wavefunctions and the band gaps in these materials. This proposal is strongly enhanced by an active collaboration between L3/Cincinnati Electronics, with experience in effective design and manufacture of complex infrared imaging systems, the world-class nanowire growth group at Australian National University, and the research group at UC which has substantial experience in the imaging and spectroscopy of single semiconductor nanowires. The research described in this proposal is made compelling by two new developments: (1) the newly developed capability to grow III-Sb and InAs nanowires and nanowire heterostructures of very high quality, and (2) the very recent confirmation in our laboratories that it is possible to make single nanowire dynamical measurements of photoexcited carrier recombinations and relaxation with very high sensitivity out into the infrared. The specific goals of this research are to measure the band structure and dynamics in Zincblende GaAsSb, InAsSb and InGaAs ternary alloy heterostructures. This ability to tune the band structure to design new nanostructures will enable the design of new extremely sensitive detectors in the infrared. These nanostructures will be combined so as to make sensitive 1D and 2D IR detector arrays. Students and faculty at the academic institutions will be exposed to the dynamics and complexities involved in applied research at a corporate research facility, while the staff at L-3/Cincinnati Electronics will be exposed to the basic science and technological research at an academic institution.