GOALI: Infrared Nanowire Heterostructures: Fundamentals and Emerging Detector Applications

红外纳米线异质结构：基本原理和新出现的探测器应用非技术摘要：这项工作是由GOALI学术联络机会资助的。本项目旨在研究一类红外有源半导体纳米线异质结在制造具有高灵敏度的独特红外成像探测器方面的应用。这个项目是辛辛那提大学和澳大利亚国立大学的基础科学和工程教员和学生与L-3/辛辛那提电子公司的研究人员合作的，该公司专门设计和制造红外探测器。这些纳米结构可能为独特的红外探测器和红外成像系统提供基础，其波长范围从1.5微米到10微米不等。这项研究的主要目标是开发和理解新的纳米线材料，这种材料将允许在中波红外上实现宽可调和高灵敏度，从而为制备独特的红外探测器和阵列提供基础。L3/辛辛那提电子公司在复杂红外成像系统的有效设计、表征和制造方面拥有经验，澳大利亚国立大学的世界级纳米线生长小组和辛辛那提大学的设备和光学物理小组之间的积极合作有力地加强了这一提议。学术机构的学生和教职员工将接触到企业研究机构应用研究涉及的动态和复杂性，而L-3/辛辛那提电子公司的工作人员将接触到学术机构的基础科学和技术研究。技术摘要：该项目旨在研究一类新发展起来的半导体纳米线异质结构的基本物理及其作为1.5微米到10微米范围内独特的红外探测器的新应用。这种纳米结构有可能大大提高红外焦平面阵列的成像能力，因为准一维几何结构开辟了调整这些材料中的波函数和带隙的新方法。L3/辛辛那提电子公司在有效设计和制造复杂红外成像系统方面拥有经验，澳大利亚国立大学的世界级纳米线生长小组与加州大学在单根半导体纳米线的成像和光谱方面拥有丰富经验的研究小组之间的积极合作有力地加强了这一提议。这项建议中描述的研究由于两个新的发展而变得引人注目：(1)新开发的生长非常高质量的III-Sb和InAs纳米线和纳米线异质结构的能力，以及(2)我们实验室最近证实，有可能以非常高的灵敏度对光激发的载流子复合和弛豫进行单纳米线的动态测量。本研究的具体目标是测量闪锌矿GaAsSb、InAsSb和InGaAs三元合金异质结的能带结构和动力学。这种调整能带结构以设计新的纳米结构的能力将使设计新的红外极其灵敏的探测器成为可能。这些纳米结构将被组合在一起，以形成灵敏的一维和二维红外探测器阵列。学术机构的学生和教职员工将接触到企业研究机构应用研究涉及的动态和复杂性，而L-3/辛辛那提电子公司的工作人员将接触到学术机构的基础科学和技术研究。

Infrared Nanowire Heterostructures: Fundamentals and Emerging Detector ApplicationsNontechnical Abstract:This work is funded under the area of Grant Opportunties for Academic Liaison with Industry (GOALI). This project is to investigate the application of a class of infrared active semiconductor nanowire heterostructures for creation of unique infrared imaging detectors with enhanced sensitivity. This project is a collaboration between the basic science and engineering faculty and students at the University of Cincinnati and Australian National University with the research staff at L-3/Cincinnati Electronics which specializes in the design and manufacture of infrared detectors. These nanostructures may provide the basis for unique infrared detectors and infrared imaging systems spanning a wide wavelength range from 1.5 microns to 10 microns. The overarching goal of this research is to develop and understand new nanowire based materials which will allow broad tunability and high sensitivity over the mid-wave IR and thus provide a foundation to fabricate unique IR detectors and arrays. This proposal is strongly enhanced by an active collaboration among L3/Cincinnati Electronics, with experience in effective design, characterization and manufacture of complex infrared imaging systems, the world-class nanowire growth group at Australian National University, and the device and optical Physics group at the University of Cincinnati. Students and faculty at the academic institutions will be exposed to the dynamics and complexities involved in applied research at a corporate research facility, while the staff at L-3/Cincinnati Electronics will be exposed to the basic science and technological research at an academic institution. Technical Abstract:This project is to investigate the basic physics of a newly grown class of semiconductor nanowire heterostructures and their emerging applications as unique infrared detectors spanning the range from 1.5 microns to 10 microns. Such nanostructures have the potential to substantially enhance the capabilities of infrared focal plane arrays for imaging since the quasi one-dimensional geometry opens up new ways to tune the wavefunctions and the band gaps in these materials. This proposal is strongly enhanced by an active collaboration between L3/Cincinnati Electronics, with experience in effective design and manufacture of complex infrared imaging systems, the world-class nanowire growth group at Australian National University, and the research group at UC which has substantial experience in the imaging and spectroscopy of single semiconductor nanowires. The research described in this proposal is made compelling by two new developments: (1) the newly developed capability to grow III-Sb and InAs nanowires and nanowire heterostructures of very high quality, and (2) the very recent confirmation in our laboratories that it is possible to make single nanowire dynamical measurements of photoexcited carrier recombinations and relaxation with very high sensitivity out into the infrared. The specific goals of this research are to measure the band structure and dynamics in Zincblende GaAsSb, InAsSb and InGaAs ternary alloy heterostructures. This ability to tune the band structure to design new nanostructures will enable the design of new extremely sensitive detectors in the infrared. These nanostructures will be combined so as to make sensitive 1D and 2D IR detector arrays. Students and faculty at the academic institutions will be exposed to the dynamics and complexities involved in applied research at a corporate research facility, while the staff at L-3/Cincinnati Electronics will be exposed to the basic science and technological research at an academic institution.