High-field Terahertz Characterization of transport Phenomena in Graphene and Semiconductor

石墨烯和半导体中输运现象的高场太赫兹表征

• 批准号: 412898-2011
• 负责人: Cooke, David
• 金额: $ 13.51万
• 依托单位: McGill University
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2012
• 资助国家: 加拿大
• 起止时间: 2012-01-01 至 2013-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=515639
• 关键词: field; Terahertz; Characterization; transport; Phenomena

Applications in the terahertz (THz) region of the electromagnetic spectrum, lying in between microwaves and the infrared, are only now reaching commercialization. The spectral region's full potential is held back by the limited control that we have over the way this form of light interacts with materials. In this project we explore the ultra-strong coupling of THz light with novel materials including nanoengineered graphene and semiconductor quantum wires. Using this enhanced coupling which occurs when the THz intensity is high, we aim to demonstrate new ways to generate, detect and manipulate THz light amplitude and phase.

电磁频谱的太赫兹（THz）区域的应用，位于微波和红外线之间，现在才实现商业化。光谱区域的全部潜力被我们对这种形式的光与材料相互作用的方式的有限控制所阻碍。在这个项目中，我们探索了太赫兹光与包括纳米工程石墨烯和半导体量子线在内的新型材料的超强耦合。利用这种增强的耦合时发生的太赫兹强度是高的，我们的目标是展示新的方法来产生，检测和操纵太赫兹光的振幅和相位。