High power nanowire green lasers monolithically grown on silicon: Bridging the green gap

在硅上单片生长的高功率纳米线绿光激光器：弥合绿光差距

• 批准号: 430413-2012
• 负责人: Shih, Ishiang
• 金额: $ 9.8万
• 依托单位: McGill University
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2012
• 资助国家: 加拿大
• 起止时间: 2012-01-01 至 2013-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=516529
• 关键词: power; nanowire; green; lasers; monolithically

This project is related to the development of high performance green-emitting lasers on low cost, large area Si substrates. To date, a green semiconductor laser diode that can operate at ~ 550 nm, to which the human eye is most sensitive, has not yet been demonstrated, which have been identified as one of the major bottlenecks for the emerging, massive markets of pico-projectors, full-color displays, and solid state lighting. The authors have recently developed, for the first time, InGaN/GaN dot-in-a-wire nanoscale heterostructures on Si, which can exhibit ultrahigh emission efficiency (>60%) in the green wavelength range. Additionally, the authors have demonstrated, for the first time, room-temperature operational quantum dot lasers on a Si-platform. In this project, by exploiting the full potential of the novel dot-in-a-wire nanoscale heterostructures, the authors propose a synergetic effort for the development of, for the first time, high performance nanowire green lasers on Si substrate, with the objective to achieve ultralow threshold (< 5 mA) and large output power (> 1 Watt). Compared to the conventional second harmonic generation based lasers, the nanowire green laser diodes can exhibit drastically reduced manufacturing cost and significantly enhanced efficiency and output power, which can transform the green laser market and their numerous niche applications. This project will also involve close collaborations with research engineers in Meaglow Ltd. and OLA Display Corp. We strongly believe it is of imminent interest to launch such a multidisciplinary project, which is poised to provide a paradigm shift in the rapidly evolving green laser market and the associated massive business sectors in projectors, displays, solid state lighting, and medical diagnostics, to name just a few.

本项目是关于在低成本、大面积硅衬底上开发高性能绿色发光激光器的项目。到目前为止，人眼对~550 nm最敏感的绿色半导体激光二极管还没有被展示出来，这已经被确定为微微投影仪、全彩色显示器和固态照明等新兴、庞大市场的主要瓶颈之一。作者最近首次在硅上制备了InGaN/GaN线中点纳米异质结，这种异质结在绿光波段具有超高的发射效率(&gt；60%)。此外，作者还首次演示了在硅平台上运行的室温量子点激光器。在这个项目中，通过充分开发新型的线中点异质结构的潜力，作者提出了一项协同努力，首次在硅衬底上开发高性能的纳米线绿光激光器，目标是实现超低阈值(&lt；5 mA)和大输出功率(&gt；1瓦)。与传统的基于二次谐波产生的激光器相比，纳米线绿色激光二极管可以显著降低制造成本，显著提高效率和输出功率，这将改变绿色激光市场及其众多利基应用。该项目还将涉及与Meaglow有限公司和Ola Display公司的研究工程师的密切合作。我们坚信，启动这样一个多学科项目是迫在眉睫的兴趣，它将为快速发展的绿色激光市场以及相关的投影仪、显示器、固态照明和医疗诊断等大型业务部门带来范式转变，仅举几例。