High power nanowire green lasers monolithically grown on silicon: Bridging the green gap

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This project is related to the development of high performance green-emitting lasers on low cost, large area Si substrates. To date, a green semiconductor laser diode that can operate at ~ 550 nm, to which the human eye is most sensitive, has not yet been demonstrated, which have been identified as one of the major bottlenecks for the emerging, massive markets of pico-projectors, full-color displays, and solid state lighting. The authors have recently developed, for the first time, InGaN/GaN dot-in-a-wire nanoscale heterostructures on Si, which can exhibit ultrahigh emission efficiency (>60%) in the green wavelength range. Additionally, the authors have demonstrated, for the first time, room-temperature operational quantum dot lasers on a Si-platform. In this project, by exploiting the full potential of the novel dot-in-a-wire nanoscale heterostructures, the authors propose a synergetic effort for the development of, for the first time, high performance nanowire green lasers on Si substrate, with the objective to achieve ultralow threshold (< 5 mA) and large output power (> 1 Watt). Compared to the conventional second harmonic generation based lasers, the nanowire green laser diodes can exhibit drastically reduced manufacturing cost and significantly enhanced efficiency and output power, which can transform the green laser market and their numerous niche applications. This project will also involve close collaborations with research engineers in Meaglow Ltd. and OLA Display Corp. We strongly believe it is of imminent interest to launch such a multidisciplinary project, which is poised to provide a paradigm shift in the rapidly evolving green laser market and the associated massive business sectors in projectors, displays, solid state lighting, and medical diagnostics, to name just a few.