High power nanowire green lasers monolithically grown on silicon: Bridging the green gap

在硅上单片生长的高功率纳米线绿光激光器：弥合绿光差距

• 批准号: 430413-2012
• 负责人: Shih, Ishiang
• 金额: $ 9.8万
• 依托单位: McGill University
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2014
• 资助国家: 加拿大
• 起止时间: 2014-01-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=552560
• 关键词: power; nanowire; green; lasers; monolithically

This project is related to the development of high performance green-emitting lasers on low cost, large area Si substrates. To date, a green semiconductor laser diode that can operate at ~ 550 nm, to which the human eye is most sensitive, has not yet been demonstrated, which have been identified as one of the major bottlenecks for the emerging, massive markets of pico-projectors, full-color displays, and solid state lighting. The authors have recently developed, for the first time, InGaN/GaN dot-in-a-wire nanoscale heterostructures on Si, which can exhibit ultrahigh emission efficiency (>60%) in the green wavelength range. Additionally, the authors have demonstrated, for the first time, room-temperature operational quantum dot lasers on a Si-platform. In this project, by exploiting the full potential of the novel dot-in-a-wire nanoscale heterostructures, the authors propose a synergetic effort for the development of, for the first time, high performance nanowire green lasers on Si substrate, with the objective to achieve ultralow threshold (< 5 mA) and large output power (> 1 Watt). Compared to the conventional second harmonic generation based lasers, the nanowire green laser diodes can exhibit drastically reduced manufacturing cost and significantly enhanced efficiency and output power, which can transform the green laser market and their numerous niche applications. This project will also involve close collaborations with research engineers in Meaglow Ltd. and OLA Display Corp. We strongly believe it is of imminent interest to launch such a multidisciplinary project, which is poised to provide a paradigm shift in the rapidly evolving green laser market and the associated massive business sectors in projectors, displays, solid state lighting, and medical diagnostics, to name just a few.

该项目涉及在低成本、大面积Si衬底上开发高性能绿光发射激光器。到目前为止，还没有证明可以在人眼最敏感的~ 550 nm处工作的绿色半导体激光二极管，这已经被认为是微型投影仪、全色显示器和固态照明的新兴的大规模市场的主要瓶颈之一。作者最近首次在Si上开发了InGaN/GaN线中点纳米级异质结构，该结构在绿色波长范围内可以表现出高发射效率（>60%）。此外，作者还首次在Si平台上展示了室温运行的量子点激光器。在这个项目中，通过开发新型线中点纳米级异质结构的全部潜力，作者首次提出了在Si衬底上开发高性能纳米线绿色激光器的协同努力，目标是实现超低阈值（< 5 mA）和大输出功率（> 1 W）。与传统的基于二次谐波产生的激光器相比，纳米线绿色激光二极管可以表现出显著降低的制造成本和显著增强的效率和输出功率，这可以改变绿色激光器市场及其众多的利基应用。该项目还将涉及与Meaglow有限公司和奥拉显示器公司的研究工程师的密切合作。我们坚信，推出这样一个多学科项目是迫在眉睫的兴趣，它将为快速发展的绿色激光市场和投影仪、显示器、固态照明和医疗诊断等相关的大规模业务部门提供范式转变。