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Growth of Semiconductor Bulk Single Crystals

Growth of Semiconductor Bulk Single Crystals
半导体块状单晶的生长
批准号:
99118-2013
负责人:
Dost, Sadik
金额:
$3.21万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2013
资助国家:
加拿大
项目状态:
已结题
起止时间:
2013-01-01 至 2014-12-31

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中文摘要
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英文摘要
Almost all electronic and optoelectronic devices need semiconducting materials of single crystalline structure. These materials are called single crystals, and are produced by a solidification process called crystal growth. Today, most bulk semiconductor single crystals are grown from the liquid phase by the growth processes known as the melt/solution techniques. These growth techniques have evolved from artisanship, relying very much on experience and intuition. Even today, this is the case in most techniques if not in all. The production of the same crystal twice is still a challenge. The applicant's research efforts have thus been focused on making these crystal growth techniques scientific so that the desired high quality crystals can be grown reproducibly. This is the main objective of the proposed research program.
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Growth of Semiconductor Bulk Single Crystals
  • 批准号:
    99118-2013
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $3.21万
  • 财政年份:
    2017
  • 负责人:
    Dost, Sadik
  • 依托单位:
Growth of Semiconductor Bulk Single Crystals
  • 批准号:
    99118-2013
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $3.21万
  • 财政年份:
    2016
  • 负责人:
    Dost, Sadik
  • 依托单位:
Semiconductor Crystal Growth
  • 批准号:
    1000211662-2008
  • 项目类别:
    Canada Research Chairs
  • 资助金额:
    $10.93万
  • 财政年份:
    2016
  • 负责人:
    Dost, Sadik
  • 依托单位:
Growth of Semiconductor Bulk Single Crystals
  • 批准号:
    99118-2013
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $3.21万
  • 财政年份:
    2015
  • 负责人:
    Dost, Sadik
  • 依托单位:
海外基金