Novel III-V and I-III-VI based solar cells with enhanced energy conversion efficiency
Novel III-V and I-III-VI based solar cells with enhanced energy conversion efficiency
批准号:
365203-2008
负责人:
Shih, Ishiang
金额:
$9.11万
依托单位:
依托单位国家:
加拿大
项目类别:
Strategic Projects - Group
财政年份:
2008
资助国家:
加拿大
项目状态:
已结题
起止时间:
2008-01-01 至 2009-12-31
中文摘要
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英文摘要
Today, with the rapid growth in the world's energy consumption, photovoltaics, a technology that converts light
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会议论文
Research on Crystalline Compound Semiconductors and Transparent-Conducting Oxides
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批准号:RGPIN-2014-04152
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.82万
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财政年份:2017
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负责人:Shih, Ishiang
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依托单位:
Research on Crystalline Compound Semiconductors and Transparent-Conducting Oxides
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批准号:RGPIN-2014-04152
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.82万
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财政年份:2016
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负责人:Shih, Ishiang
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依托单位:
Research on Crystalline Compound Semiconductors and Transparent-Conducting Oxides
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批准号:RGPIN-2014-04152
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.82万
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财政年份:2015
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负责人:Shih, Ishiang
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依托单位:
Research on Crystalline Compound Semiconductors and Transparent-Conducting Oxides
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批准号:RGPIN-2014-04152
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.82万
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财政年份:2014
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负责人:Shih, Ishiang
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依托单位:
High power nanowire green lasers monolithically grown on silicon: Bridging the green gap
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批准号:430413-2012
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项目类别:Strategic Projects - Group
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资助金额:$9.8万
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财政年份:2014
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负责人:Shih, Ishiang
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依托单位:
High power nanowire green lasers monolithically grown on silicon: Bridging the green gap
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批准号:430413-2012
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项目类别:Strategic Projects - Group
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资助金额:$9.8万
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财政年份:2013
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负责人:Shih, Ishiang
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依托单位:
Semiconductors for high efficiency solar cells and high mobility thin film transistors
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批准号:4223-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.4万
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财政年份:2013
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负责人:Shih, Ishiang
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依托单位:
Semiconductors for high efficiency solar cells and high mobility thin film transistors
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批准号:4223-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.4万
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财政年份:2012
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负责人:Shih, Ishiang
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依托单位:
High power nanowire green lasers monolithically grown on silicon: Bridging the green gap
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批准号:430413-2012
-
项目类别:Strategic Projects - Group
-
资助金额:$9.8万
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财政年份:2012
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负责人:Shih, Ishiang
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依托单位:
Semiconductors for high efficiency solar cells and high mobility thin film transistors
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批准号:4223-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.4万
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财政年份:2011
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负责人:Shih, Ishiang
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依托单位:
Semiconductors for high efficiency solar cells and high mobility thin film transistors
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批准号:4223-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.4万
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财政年份:2010
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负责人:Shih, Ishiang
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依托单位:
Novel III-V and I-III-VI based solar cells with enhanced energy conversion efficiency
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批准号:365203-2008
-
项目类别:Strategic Projects - Group
-
资助金额:$9.11万
-
财政年份:2010
-
负责人:Shih, Ishiang
-
依托单位:
Novel III-V and I-III-VI based solar cells with enhanced energy conversion efficiency
-
批准号:365203-2008
-
项目类别:Strategic Projects - Group
-
资助金额:$9.11万
-
财政年份:2009
-
负责人:Shih, Ishiang
-
依托单位:
Semiconductors for high efficiency solar cells and high mobility thin film transistors
-
批准号:4223-2009
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2009
-
负责人:Shih, Ishiang
-
依托单位:
Development of thin film transistors and nano devices
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批准号:4223-2004
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项目类别:Discovery Grants Program - Individual
-
资助金额:$1.46万
-
财政年份:2008
-
负责人:Shih, Ishiang
-
依托单位:
Development of thin film transistors and nano devices
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批准号:4223-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2007
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负责人:Shih, Ishiang
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依托单位:
Development of thin film transistors and nano devices
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批准号:4223-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2006
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负责人:Shih, Ishiang
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依托单位:
Development of thin film transistors and nano devices
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批准号:4223-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2005
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负责人:Shih, Ishiang
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依托单位:
Development of thin film transistors and nano devices
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批准号:4223-2004
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2004
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负责人:Shih, Ishiang
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依托单位:
Development of compound semiconductors for photovoltaic cells and thin film transistors
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批准号:4223-2002
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项目类别:Discovery Grants Program - Individual
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资助金额:$1.46万
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财政年份:2003
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负责人:Shih, Ishiang
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依托单位:
国内基金
海外基金
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