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Mitigating transistor aging in planar and 3D MOSFET integrated circuits

Mitigating transistor aging in planar and 3D MOSFET integrated circuits
减轻平面和 3D MOSFET 集成电路中的晶体管老化
批准号:
462849-2014
负责人:
Ivanov, André
金额:
$1.82万
依托单位国家:
加拿大
项目类别:
Engage Grants Program
财政年份:
2014
资助国家:
加拿大
项目状态:
已结题
起止时间:
2014-01-01 至 2015-12-31

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Transistor aging is a reliability problem that becomes a limiting factor of lifetime and performance of
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Novel algorithms for the placement of spare cells and routing structures into integrated circuits
  • 批准号:
    477391-2014
  • 项目类别:
    Engage Grants Program
  • 资助金额:
    $1.82万
  • 财政年份:
    2014
  • 负责人:
    Ivanov, André
  • 依托单位:
Design for test and reliability of integrated nanoscale devices and systems
  • 批准号:
    43826-2009
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $2.62万
  • 财政年份:
    2013
  • 负责人:
    Ivanov, André
  • 依托单位:
Design for test and reliability of integrated nanoscale devices and systems
  • 批准号:
    43826-2009
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $2.62万
  • 财政年份:
    2012
  • 负责人:
    Ivanov, André
  • 依托单位:
Design for test and reliability of integrated nanoscale devices and systems
  • 批准号:
    43826-2009
  • 项目类别:
    Discovery Grants Program - Individual
  • 资助金额:
    $2.62万
  • 财政年份:
    2011
  • 负责人:
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  • 依托单位:
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