Passivating layers for electrical devices.

电气设备的钝化层。

基本信息

  • 批准号:
    484607-2015
  • 负责人:
  • 金额:
    $ 1.82万
  • 依托单位:
  • 依托单位国家:
    加拿大
  • 项目类别:
    Engage Grants Program
  • 财政年份:
    2015
  • 资助国家:
    加拿大
  • 起止时间:
    2015-01-01 至 2016-12-31
  • 项目状态:
    已结题

项目摘要

Metal heating elements based on metals such as tungsten or titanium can only be heated in protective environments devoid of oxygen. For those applications that require these heating elements to operate in air, a protective coating is required. These coatings are typically based on inert high temperature materials such as oxides or nitrides. However, these high temperature materials are brittle and fail due to the large thermal expansion misfit between the metal heating element and the brittle coating. In this project is built on the concept that brittle materials are more compliant when they are extremely thin, and should better accommodate the mismatch strain. This project will focus on finding the minimum coating thickness that prevents oxidation while still accommodating the mismatch strain.
基于钨或钛等金属的金属加热元件只能在没有氧气的保护环境中加热。 对于需要这些加热元件在空气中工作的应用,需要保护涂层。 这些涂层通常基于惰性高温材料,例如氧化物或氮化物。 然而,这些高温材料是脆性的,并且由于金属加热元件和脆性涂层之间的大的热膨胀失配而失效。 在这个项目是建立在这样的概念,即脆性材料是更符合当他们非常薄,应该更好地适应失配应变。 该项目将重点寻找最小的涂层厚度,防止氧化,同时仍然适应失配应变。

项目成果

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专利数量(0)

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Cadien, Kenneth其他文献

Cadien, Kenneth的其他文献

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{{ truncateString('Cadien, Kenneth', 18)}}的其他基金

Atomic Layer Deposition of Complex Oxides for Novel Devices
用于新型器件的复合氧化物的原子层沉积
  • 批准号:
    RGPIN-2017-05858
  • 财政年份:
    2021
  • 资助金额:
    $ 1.82万
  • 项目类别:
    Discovery Grants Program - Individual
Atomic Layer Deposition of Complex Oxides for Novel Devices
用于新型器件的复合氧化物的原子层沉积
  • 批准号:
    RGPIN-2017-05858
  • 财政年份:
    2020
  • 资助金额:
    $ 1.82万
  • 项目类别:
    Discovery Grants Program - Individual
Atomic Layer Deposition of Complex Oxides for Novel Devices
用于新型器件的复合氧化物的原子层沉积
  • 批准号:
    RGPIN-2017-05858
  • 财政年份:
    2019
  • 资助金额:
    $ 1.82万
  • 项目类别:
    Discovery Grants Program - Individual
Atomic Layer Deposition of Complex Oxides for Novel Devices
用于新型器件的复合氧化物的原子层沉积
  • 批准号:
    RGPIN-2017-05858
  • 财政年份:
    2018
  • 资助金额:
    $ 1.82万
  • 项目类别:
    Discovery Grants Program - Individual
Atomic Layer Deposition of Complex Oxides for Novel Devices
用于新型器件的复合氧化物的原子层沉积
  • 批准号:
    RGPIN-2017-05858
  • 财政年份:
    2017
  • 资助金额:
    $ 1.82万
  • 项目类别:
    Discovery Grants Program - Individual
Fundamental understanding and development of novel high dielectric constant ALD gate oxides on gallium nitride substrates for MOSFET power conversion applications
用于 MOSFET 功率转换应用的氮化镓衬底上新型高介电常数 ALD 栅极氧化物的基本理解和开发
  • 批准号:
    355520-2012
  • 财政年份:
    2016
  • 资助金额:
    $ 1.82万
  • 项目类别:
    Discovery Grants Program - Individual
Fundamental understanding and development of novel high dielectric constant ALD gate oxides on gallium nitride substrates for MOSFET power conversion applications
用于 MOSFET 功率转换应用的氮化镓衬底上新型高介电常数 ALD 栅极氧化物的基本理解和开发
  • 批准号:
    355520-2012
  • 财政年份:
    2015
  • 资助金额:
    $ 1.82万
  • 项目类别:
    Discovery Grants Program - Individual
Fundamental understanding and development of novel high dielectric constant ALD gate oxides on gallium nitride substrates for MOSFET power conversion applications
用于 MOSFET 功率转换应用的氮化镓衬底上新型高介电常数 ALD 栅极氧化物的基本理解和开发
  • 批准号:
    355520-2012
  • 财政年份:
    2014
  • 资助金额:
    $ 1.82万
  • 项目类别:
    Discovery Grants Program - Individual
Canada Research Chair in Nanofabrication
加拿大纳米制造研究主席
  • 批准号:
    1000203716-2006
  • 财政年份:
    2014
  • 资助金额:
    $ 1.82万
  • 项目类别:
    Canada Research Chairs
Nano-catalytic energy cell
纳米催化能源电池
  • 批准号:
    413523-2011
  • 财政年份:
    2014
  • 资助金额:
    $ 1.82万
  • 项目类别:
    Strategic Projects - Group

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钾通道、膜电位和 CHD
  • 批准号:
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  • 财政年份:
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EAPSI:二硒化钨化学气相沉积二维半导体层的合成和电传输性能
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钙钛矿活性层和电荷收集电极之间界面的结构、能量和电性能的表征和控制
  • 批准号:
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