Record Efficiency Photovoltaic Heterostructures

创纪录的光伏异质结构效率

• 批准号: RGPIN-2017-05458
• 负责人: Fafard, Simon
• 金额: $ 2.7万
• 依托单位: Université de Sherbrooke
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2017
• 资助国家: 加拿大
• 起止时间: 2017-01-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=637265
• 关键词: Record; Efficiency; Photovoltaic; Heterostructures

In the past 3 years, Fafard’s team made breakthrough optoelectronic device advancements, now featuring the highest optical to electrical conversion efficiency ever for any type of devices. The progress has been presented recently at several invited international presentations and late-news scientific papers. This recent development in the area of advanced III-V heterostructures allowed attaining greater than 65% optical to electrical conversion efficiencies. The current proposal is to further advance the understanding and the development with these novel III-V semiconductor phototransducers. The record-efficiency devices are based on a novel vertical epitaxial heterostructure architecture (VEHSA) design. Thanks to a precise control of thin semiconductor layers grown by Metal-Organic Chemical Vapor Deposition epitaxy or by chemical beam epitaxy, the unprecedented performance can be obtained with tailored output voltages adapted for various applications. The proposed research is therefore in the area of nanoscale p/n junctions and will reveal very interesting properties for photovoltaic devices engineered with ultra-thin bases, including photon recycling effects. The heterostructure designs yielded high external quantum efficiency (EQE) values for all the structures studied experimentally, up to 20 ultra-thin subcells (PT20 devices) to date. Conversion efficiencies greater than 60% were confirmed for all structures, including recently the PT20s. Additionally, these high efficiencies can be maintained for high electrical output powers, reaching greater than 3W for chips only a few mm

在过去 3 年中，Fafard 的团队在光电器件方面取得了突破性进展，目前拥有任何类型器件中最高的光电转换效率。最近在一些受邀国际演讲和最新新闻科学论文中介绍了这一进展。先进 III-V 异质结构领域的最新进展使光电转换效率达到 65% 以上。目前的建议是进一步促进对这些新型 III-V 族半导体光电传感器的理解和开发。该创纪录效率的器件基于新颖的垂直外延异质结构架构（VEHSA）设计。由于对通过金属有机化学气相沉积外延或化学束外延生长的薄半导体层进行精确控制，可以通过适合各种应用的定制输出电压来获得前所未有的性能。因此，拟议的研究是在纳米级 p/n 结领域，并将揭示采用超薄基底设计的光伏器件的非常有趣的特性，包括光子回收效应。异质结构设计为所有实验研究的结构产生了高外量子效率 (EQE) 值，迄今为止最多有 20 个超薄子电池（PT20 器件）。所有结构的转换效率均超过 60%，包括最近的 PT20。此外，这些高效率可以保持高电输出功率，对于只有几毫米的芯片来说可以达到超过 3W