Record Efficiency Photovoltaic Heterostructures

在过去的3年里，Fafard的团队取得了突破性的光电器件进步，现在具有任何类型器件的最高光电转换效率。这一进展最近在几次受邀的国际演讲和最新的科学论文中进行了介绍。在先进的III-V异质结构领域的这一最新发展允许实现大于65%的光电转换效率。目前的建议是进一步推进这些新型III-V族半导体光传感器的理解和发展。记录效率的设备是基于一种新的垂直外延异质结构架构（VEHSA）的设计。由于对通过金属有机化学气相沉积外延或化学束外延生长的薄半导体层进行精确控制，因此可以通过适合各种应用的定制输出电压获得前所未有的性能。因此，拟议的研究是在纳米级p/n结领域，并将揭示与超薄基地，包括光子回收效应工程光伏器件非常有趣的属性。异质结构的设计产生了高的外部量子效率（EQE）值的实验研究的所有结构，多达20超薄子电池（PT 20设备）的日期。对于所有结构，包括最近的PT 20，证实了大于60%的转化效率。此外，这些高效率可以保持高的电输出功率，达到大于3 W的芯片只有几毫米

In the past 3 years, Fafard’s team made breakthrough optoelectronic device advancements, now featuring the highest optical to electrical conversion efficiency ever for any type of devices. The progress has been presented recently at several invited international presentations and late-news scientific papers. This recent development in the area of advanced III-V heterostructures allowed attaining greater than 65% optical to electrical conversion efficiencies. The current proposal is to further advance the understanding and the development with these novel III-V semiconductor phototransducers. The record-efficiency devices are based on a novel vertical epitaxial heterostructure architecture (VEHSA) design. Thanks to a precise control of thin semiconductor layers grown by Metal-Organic Chemical Vapor Deposition epitaxy or by chemical beam epitaxy, the unprecedented performance can be obtained with tailored output voltages adapted for various applications. The proposed research is therefore in the area of nanoscale p/n junctions and will reveal very interesting properties for photovoltaic devices engineered with ultra-thin bases, including photon recycling effects. The heterostructure designs yielded high external quantum efficiency (EQE) values for all the structures studied experimentally, up to 20 ultra-thin subcells (PT20 devices) to date. Conversion efficiencies greater than 60% were confirmed for all structures, including recently the PT20s. Additionally, these high efficiencies can be maintained for high electrical output powers, reaching greater than 3W for chips only a few mm