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High-efficiency micro-light emitting diode for display application

High-efficiency micro-light emitting diode for display application
用于显示应用的高效微型发光二极管
批准号:
492188-2015
负责人:
Ban, Dayan
金额:
$1.82万
依托单位:
依托单位国家:
加拿大
项目类别:
Engage Grants Program
财政年份:
2016
资助国家:
加拿大
项目状态:
已结题
起止时间:
2016-01-01 至 2017-12-31

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英文摘要
InGaN/GaN based micrometer-sized light emitting diode (µLED) is emerging as a very promising technology for next generation high-resolution, high-efficiency displays because of its significant advantages over the existing products - its luminance level can be several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays. It has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and integrated-circuit (IC) assembly. However, this technology can't be commercialized until one critical issue can be effectively addressed - the significant efficiency droop observed when the device size shrinks to micrometer range (3-10 µm). In this project, we will work closely with our industry partner - IGNIS Innovation, a Waterloo-based high-tech company with a strong establishment in display industry, to explore and develop a new technical approach that can enhance the optical
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