High-efficiency micro-light emitting diode for display application

基于InGaN/GaN的微米级发光二极管（µLED）正在成为下一代高分辨率、高效率显示器的一种非常有前途的技术，因为它比现有产品具有显着优势-其亮度水平可以比液晶器件（LCD）和有机发光二极管（OLED）显示器高出几个数量级。它具有低电压要求，并适用于混合互补金属氧化物半导体（CMOS）和集成电路（IC）组装。然而，在一个关键问题得到有效解决之前，这项技术无法商业化——当器件尺寸缩小到微米范围（3-10 μ m）时，观察到显著的效率下降。在这个项目中，我们将与我们的行业合作伙伴——位于滑铁卢的高科技公司IGNIS Innovation密切合作，探索和开发一种新的技术方法，可以增强光学性能

InGaN/GaN based micrometer-sized light emitting diode (µLED) is emerging as a very promising technology for next generation high-resolution, high-efficiency displays because of its significant advantages over the existing products - its luminance level can be several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays. It has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and integrated-circuit (IC) assembly. However, this technology can't be commercialized until one critical issue can be effectively addressed - the significant efficiency droop observed when the device size shrinks to micrometer range (3-10 µm). In this project, we will work closely with our industry partner - IGNIS Innovation, a Waterloo-based high-tech company with a strong establishment in display industry, to explore and develop a new technical approach that can enhance the optical