High-efficiency micro-light emitting diode for display application

用于显示应用的高效微型发光二极管

• 批准号: 492188-2015
• 负责人: Ban, Dayan
• 金额: $ 1.82万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2016
• 资助国家: 加拿大
• 起止时间: 2016-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=601894
• 关键词: efficiency; micro; light; emitting; diode

InGaN/GaN based micrometer-sized light emitting diode (µLED) is emerging as a very promising technology for next generation high-resolution, high-efficiency displays because of its significant advantages over the existing products - its luminance level can be several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays. It has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and integrated-circuit (IC) assembly. However, this technology can't be commercialized until one critical issue can be effectively addressed - the significant efficiency droop observed when the device size shrinks to micrometer range (3-10 µm). In this project, we will work closely with our industry partner - IGNIS Innovation, a Waterloo-based high-tech company with a strong establishment in display industry, to explore and develop a new technical approach that can enhance the optical

基于InGaN/GaN的微米尺寸发光二极管（µLED）是下一代高分辨率、高效率显示器的一种非常有前途的技术，因为它比现有产品具有显著的优势-其亮度水平可以比液晶器件（LCD）和有机发光二极管（OLED）显示器高几个数量级。它具有低电压要求，并且适合于混合互补金属氧化物半导体（CMOS）和集成电路（IC）组装。然而，在一个关键问题得到有效解决之前，这项技术无法商业化-当器件尺寸缩小到微米范围（3-10 µm）时，观察到的效率显著下降。在这个项目中，我们将与我们的行业合作伙伴IGNIS Innovation密切合作，IGNIS Innovation是一家位于滑铁卢的高科技公司，在显示器行业拥有强大的基础，探索和开发一种新的技术方法，可以提高光学