Advanced manufacturing of InN/Si nanowire tunnelling transistors for energy efficient electronics

用于节能电子产品的 InN/Si 纳米线隧道晶体管的先进制造

• 批准号: 494152-2016
• 负责人: Szkopek, Thomas
• 金额: $ 9.11万
• 依托单位: McGill University
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2017
• 资助国家: 加拿大
• 起止时间: 2017-01-01 至 2018-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=642040
• 关键词: Advanced; manufacturing; InN; Si; nanowire

Since the dawn of modern computing, the energy efficiency of computation has been a driving force forchange. It is estimated that approximately 1500 TWhr per year or 10% of global electricity production isconsumed on electronics, primarily on cloud computing. The implications of these unprecedented quantities of energy consumed by computing infrastructure are of growing concern, motivating the semiconductor community to seek out energy efficient alternatives.We propose to address the problem of energy efficiency in electronics by the development of a scalable advanced manufacturing process for low-voltage InN/Si tunnelling field effect transistors (TFETs). Reducing transistor operating voltage by adopting TFETs based on advanced nanomaterials synthesis via molecular beam epitaxy (MBE) is the most direct way of improving the energy efficiency of logic circuits. The TFET exploits the principle of quantum tunnelling of electrons through potential barriers, and can therefore operate at lower voltages than conventional transistors. MBE produces the highest quality semiconductors, and we will apply this technique to the scalable manufacture of InN TFETs. InN nanowires have been identified as the nanomaterial of choice because of their superior electronic quality and ideal band alignment with Si.The increased energy efficiency of a TFET would permit higher speed device operation, as it is primarily heat removal that limits clock speed. This project combines the synergetic complementary expertise of our team, including the quantum device expertise of Prof. Szkopek, the epitaxial nanomaterial growth expertise of the Prof. Mi, the semiconductor device modelling expertise of industrial partner Crosslight, and the nitride nanomaterial growth expertise of industrial partner Meaglow. By participating in this academic/industry partnership, Canadian companies Crosslight and Meaglow will be ideally placed to stake out a role in the integration of TFET technology into the $300 billion / annum semiconductor industry, in the specific domains of technology computer aided design (TCAD) and InN growth technology respectively.

自从现代计算出现以来，计算的能源效率一直是变革的驱动力。据估计，每年约有1500 TWhr或全球电力生产的10%用于电子产品，主要是云计算。这些前所未有的计算基础设施所消耗的能量的影响越来越受到关注，激励半导体社区寻求节能的替代品。我们建议通过开发一种可扩展的先进制造工艺来解决电子产品中的能源效率问题，该工艺用于低压InN/Si隧道场效应晶体管（TFTs）。采用基于分子束外延（MBE）先进纳米材料合成的TFT来降低晶体管工作电压是提高逻辑电路能效的最直接方法。TFET利用电子通过势垒的量子隧穿原理，因此可以在比传统晶体管更低的电压下工作。分子束外延生产最高质量的半导体，我们将把这项技术应用于InN TFT的规模化生产。InN纳米线由于其上级电子质量和与Si的理想能带对准而被确定为选择的纳米材料。TFET的增加的能量效率将允许更高速度的器件操作，因为它主要是限制时钟速度的热去除。该项目结合了我们团队的协同互补专业知识，包括Szkopek教授的量子器件专业知识，Mi教授的外延纳米材料生长专业知识，工业合作伙伴Crosslight的半导体器件建模专业知识，以及工业合作伙伴Meaglow的氮化物纳米材料生长专业知识。通过参与这一学术/行业合作伙伴关系，加拿大公司Crosslight和Meaglow将在将TFET技术整合到3000亿美元/年的半导体行业中发挥作用，分别在技术计算机辅助设计（TCAD）和InN增长技术的特定领域。