2-Dimensional Materials and Atomic Scale Engineering for Nanoelectronics
纳米电子学的二维材料和原子级工程
基本信息
- 批准号:342439-2013
- 负责人:
- 金额:$ 2.55万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Discovery Grants Program - Individual
- 财政年份:2017
- 资助国家:加拿大
- 起止时间:2017-01-01 至 2018-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The question of the future of electronics looms large. Moore's Law, a prescient prediction from 1965 about the economics of making transistors smaller, has described the progress of the semiconductor industry for a half-century. Not only will the ubiquitous spread of silicon continue with every successive generation of transistors, but transistors themselves will reach dimensions approaching the atomic scale. Can electronics be taken to the logical conclusion of this scaling, where transistors are formed of 2-dimensional materials composed of single atomic monolayers? Szkopek's research plan addresses this challenge through three major research themes:1) Synthesize and characterize 2D atomic crystals - Graphene, the subject of the 2010 Nobel Prize in physics, is but the first member of the entirely new class of materials that are single layers of atoms. Szkopek will work on fundamental and applied studies of 2D crystals, with the aim of developing new electronic devices that take advantage of the unique combinations of properties associated with 2D materials.2) Develop semiconductor spin cooling - Exploiting a new cooling technique discovered by Szkopek and collaborator Gervais (McGill), solid state refrigerators with no moving parts will be developed for niche low-noise electronics and for emerging quantum technologies based on low-dimensional semiconductors.3) Develop graphene electro-mechanical systems - The unique electrical and mechanical properties of graphene membranes can be exploited to enhance the performance of electromechanical devices such as digital switches. What is the physical limit of energy consumption and switching speed for such switches in electronic circuits?
电子产品的未来问题迫在眉睫。摩尔定律是1965年关于晶体管小型化经济性的一个有先见之明的预言,它描述了半个世纪以来半导体工业的进步。不仅硅的普及将随着每一代晶体管的出现而继续下去,而且晶体管本身的尺寸也将接近原子尺度。电子学是否可以从这种比例关系中得出逻辑结论,即晶体管是由单原子单层组成的二维材料构成的?Szkopek的研究计划通过三个主要的研究主题来应对这一挑战:1)合成和表征2D原子晶体-石墨烯,2010年诺贝尔物理学奖的主题,只是单层原子的全新材料类别的第一个成员。Szkopek将致力于2D晶体的基础和应用研究,目的是开发新的电子设备,利用与2D材料相关的特性的独特组合。2)开发半导体自旋冷却-利用Szkopek和合作者热尔韦(麦吉尔)发现的一种新的冷却技术,将开发无运动部件的固态制冷机,用于利基低噪声电子产品和基于低维半导体的新兴量子技术。3)开发石墨烯机电系统-石墨烯膜独特的电气和机械性能可用于提高数字开关等机电设备的性能。在电子电路中,这种开关的能耗和开关速度的物理极限是什么?
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Szkopek, Thomas其他文献
The fine structure constant determines spontaneous emission rates from semiconductors
- DOI:
10.1063/1.3591171 - 发表时间:
2011-05-23 - 期刊:
- 影响因子:4
- 作者:
Szkopek, Thomas - 通讯作者:
Szkopek, Thomas
Selective ion sensing with high resolution large area graphene field effect transistor arrays
- DOI:
10.1038/s41467-020-16979-y - 发表时间:
2020-06-26 - 期刊:
- 影响因子:16.6
- 作者:
Fakih, Ibrahim;Durnan, Oliver;Szkopek, Thomas - 通讯作者:
Szkopek, Thomas
Sensitive Precise pH Measurement with Large-Area Graphene Field-Effect Transistors at the Quantum-Capacitance Limit
- DOI:
10.1103/physrevapplied.8.044022 - 发表时间:
2017-10-30 - 期刊:
- 影响因子:4.6
- 作者:
Fakih, Ibrahim;Mahvash, Farzaneh;Szkopek, Thomas - 通讯作者:
Szkopek, Thomas
Tuning the aggregation of graphene oxide dispersions to synthesize elastic, low density graphene aerogels
- DOI:
10.1039/c7ta07006c - 发表时间:
2017-11-28 - 期刊:
- 影响因子:11.9
- 作者:
Hu, Kaiwen;Szkopek, Thomas;Cerruti, Marta - 通讯作者:
Cerruti, Marta
High resolution potassium sensing with large-area graphene field-effect transistors
- DOI:
10.1016/j.snb.2019.04.032 - 发表时间:
2019-07-15 - 期刊:
- 影响因子:8.4
- 作者:
Fakih, Ibrahim;Centeno, Alba;Szkopek, Thomas - 通讯作者:
Szkopek, Thomas
Szkopek, Thomas的其他文献
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{{ truncateString('Szkopek, Thomas', 18)}}的其他基金
2D Materials Engineering for Electron Devices
电子器件二维材料工程
- 批准号:
RGPIN-2018-04851 - 财政年份:2022
- 资助金额:
$ 2.55万 - 项目类别:
Discovery Grants Program - Individual
2D Materials Engineering for Electron Devices
电子器件二维材料工程
- 批准号:
RGPIN-2018-04851 - 财政年份:2021
- 资助金额:
$ 2.55万 - 项目类别:
Discovery Grants Program - Individual
2D Materials Engineering for Electron Devices
电子器件二维材料工程
- 批准号:
RGPIN-2018-04851 - 财政年份:2020
- 资助金额:
$ 2.55万 - 项目类别:
Discovery Grants Program - Individual
Market Assessment for Next-Generation Hydrological Sensor Technology
下一代水文传感器技术的市场评估
- 批准号:
538560-2019 - 财政年份:2019
- 资助金额:
$ 2.55万 - 项目类别:
Idea to Innovation
2D Materials Engineering for Electron Devices
电子器件二维材料工程
- 批准号:
RGPIN-2018-04851 - 财政年份:2019
- 资助金额:
$ 2.55万 - 项目类别:
Discovery Grants Program - Individual
2D Materials Engineering for Electron Devices
电子器件二维材料工程
- 批准号:
RGPIN-2018-04851 - 财政年份:2018
- 资助金额:
$ 2.55万 - 项目类别:
Discovery Grants Program - Individual
Ultra high quality transition metal dichalcogenide synthesis by molecular beam epitaxy for integrated light emitting diodes and ion sensitive transistors
通过分子束外延合成超高质量过渡金属二硫属化物,用于集成发光二极管和离子敏感晶体管
- 批准号:
494154-2016 - 财政年份:2018
- 资助金额:
$ 2.55万 - 项目类别:
Strategic Projects - Group
Advanced manufacturing of InN/Si nanowire tunnelling transistors for energy efficient electronics
用于节能电子产品的 InN/Si 纳米线隧道晶体管的先进制造
- 批准号:
494152-2016 - 财政年份:2018
- 资助金额:
$ 2.55万 - 项目类别:
Strategic Projects - Group
Ultra high quality transition metal dichalcogenide synthesis by molecular beam epitaxy for integrated light emitting diodes and ion sensitive transistors
通过分子束外延合成超高质量过渡金属二硫属化物,用于集成发光二极管和离子敏感晶体管
- 批准号:
494154-2016 - 财政年份:2017
- 资助金额:
$ 2.55万 - 项目类别:
Strategic Projects - Group
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Journal of Materials Science & Technology
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职业:用于储能的二维原子层材料的可扩展电化学剥离和功能化
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