New Transistor Model for Transition from Moderate to Strong Inversion and it's Applications for Design of CMOS Integrated Circuits with Fast Load and Supply Transients

从中度反转到强反转过渡的新晶体管模型及其在具有快速负载和电源瞬变的 CMOS 集成电路设计中的应用

• 批准号: RGPIN-2017-03719
• 负责人: Filanovsky, Igor
• 金额: $ 1.75万
• 依托单位: University of Alberta
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2018
• 资助国家: 加拿大
• 起止时间: 2018-01-01 至 2019-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=650712
• 关键词: New; Transistor; Model; Transition; Moderate

The practical side of the proposed research consists of recommendations for design of power management system blocks providing fast response for instant loads and fast power supply transients. The results will be applicable in the areas of advanced mobile computer terminals, medical and environmental sensors, and automotive instrumentation equipment.***A MOS transistor supplies the current depending on the condition which is called “inversion”. The weak and moderate inversions provide low currents, the strong inversion means operation at high currents. Moderate inversion is increasingly important region for low power analog circuit design. The definition of weak inversion says that a MOS transistor operates in weak inversion if the gate-source voltage is less than the threshold voltage. This means that for the gate-source voltage larger than the threshold voltage transistor starts to operate in moderate inversion. With further increase of the gate-source voltage the transistor enters strong inversion. Yet a simple model of the transistor drain current operating in moderate inversion was absent. Starting from the so-called “reconciliation” model the author of the proposal was able to provide this model which allows a better control for transition from moderate to strong inversion. ***The application of this model for design and investigation of wide range of circuits: amplifiers, voltage regulators and voltage references is the first project goal.***The modern tendency is to use integrated circuits in two distinct modes of operation. In the first mode the circuit is not loaded and should itself consume as less power as possible. In the second mode the circuit should provide power to the load. When the circuit does not supply power the transistors should operate in weak or moderate inversion. When the load is applied the transistors should start to work nearly instantly in strong inversion. This is especially valid for the circuits in power management electronic systems.***The proposed model is suitable for design of fast-responding circuits with practically instant load-on and load-off transients. Developing a complex of such circuits is the second project goal.***The fast response is usually required for both load and power transients. The design for fast power transients is not sufficiently investigated; the methods used for this purpose may even destroy the circuit operation when the supply voltage is applied. During the power transients, the undesirable operation points may occur. The mechanisms of their occurrences are not clear.***The third project goal is to profoundly investigate the occurrence of such points in these complex transients and develop methods for their elimination.***In summary, the proposal will develop and investigate, on the basis of new transistor model, the circuits with fast load and power transients, methods of their design, and give recommendations for their reliable operation.

所提出的研究的实际方面包括电源管理系统模块的设计建议，提供快速响应瞬时负载和快速电源瞬态。研究结果将应用于先进的移动的计算机终端、医疗和环境传感器以及汽车仪表设备等领域。* MOS晶体管根据被称为“反转”的条件提供电流。弱反转和中等反转提供低电流，强反转意味着在高电流下操作。对于低功耗模拟电路设计而言，适度反型区越来越重要。弱反型的定义是，如果栅极-源极电压小于阈值电压，则MOS晶体管以弱反型工作。这意味着，对于大于阈值电压的栅极-源极电压，晶体管开始以适度反相操作。随着栅极-源极电压的进一步增加，晶体管进入强反型。然而，一个简单的模型，晶体管漏极电流工作在中度反转是缺席。从所谓的“调和”模型开始，该提案的作者能够提供这种模型，该模型允许更好地控制从中等到强反转的过渡。* 将此模型应用于各种电路的设计和研究：放大器，稳压器和电压基准是第一个项目目标。*现代的趋势是在两种不同的操作模式中使用集成电路。在第一种模式下，电路不加载，并且其本身应当消耗尽可能少的功率。在第二模式中，电路应当向负载提供功率。当电路不供电时，晶体管应该以弱或中等反相工作。当施加负载时，晶体管应该几乎立即开始以强反相工作。这对于电源管理电子系统中的电路尤其有效。*该模型适用于设计快速响应的电路，几乎瞬间加载和负载关闭瞬态。第二个项目目标是开发一个这样的电路复合体。快速响应通常需要负载和功率瞬变。快速功率瞬变的设计没有得到充分的研究;用于此目的的方法甚至可能在施加电源电压时破坏电路工作。 在功率瞬变期间，可能出现不期望的操作点。其发生机制尚不清楚 *。项目的第三个目标是深入研究这些复杂瞬变中这些点的出现，并开发消除它们的方法。总之，该提案将在新晶体管模型的基础上，开发和研究具有快速负载和功率瞬变的电路，其设计方法，并为其可靠运行提供建议。