New Transistor Model for Transition from Moderate to Strong Inversion and it's Applications for Design of CMOS Integrated Circuits with Fast Load and Supply Transients
从中度反转到强反转过渡的新晶体管模型及其在具有快速负载和电源瞬变的 CMOS 集成电路设计中的应用
基本信息
- 批准号:RGPIN-2017-03719
- 负责人:
- 金额:$ 1.75万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Discovery Grants Program - Individual
- 财政年份:2019
- 资助国家:加拿大
- 起止时间:2019-01-01 至 2020-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The practical side of the proposed research consists of recommendations for design of power management system blocks providing fast response for instant loads and fast power supply transients. The results will be applicable in the areas of advanced mobile computer terminals, medical and environmental sensors, and automotive instrumentation equipment.***A MOS transistor supplies the current depending on the condition which is called “inversion”. The weak and moderate inversions provide low currents, the strong inversion means operation at high currents. Moderate inversion is increasingly important region for low power analog circuit design. The definition of weak inversion says that a MOS transistor operates in weak inversion if the gate-source voltage is less than the threshold voltage. This means that for the gate-source voltage larger than the threshold voltage transistor starts to operate in moderate inversion. With further increase of the gate-source voltage the transistor enters strong inversion. Yet a simple model of the transistor drain current operating in moderate inversion was absent. Starting from the so-called “reconciliation” model the author of the proposal was able to provide this model which allows a better control for transition from moderate to strong inversion. ***The application of this model for design and investigation of wide range of circuits: amplifiers, voltage regulators and voltage references is the first project goal.***The modern tendency is to use integrated circuits in two distinct modes of operation. In the first mode the circuit is not loaded and should itself consume as less power as possible. In the second mode the circuit should provide power to the load. When the circuit does not supply power the transistors should operate in weak or moderate inversion. When the load is applied the transistors should start to work nearly instantly in strong inversion. This is especially valid for the circuits in power management electronic systems.***The proposed model is suitable for design of fast-responding circuits with practically instant load-on and load-off transients. Developing a complex of such circuits is the second project goal.***The fast response is usually required for both load and power transients. The design for fast power transients is not sufficiently investigated; the methods used for this purpose may even destroy the circuit operation when the supply voltage is applied. During the power transients, the undesirable operation points may occur. The mechanisms of their occurrences are not clear.***The third project goal is to profoundly investigate the occurrence of such points in these complex transients and develop methods for their elimination.***In summary, the proposal will develop and investigate, on the basis of new transistor model, the circuits with fast load and power transients, methods of their design, and give recommendations for their reliable operation.
拟议研究的实际方面包括对电源管理系统模块的设计建议,该系统模块可为即时负载和快速电源瞬变提供快速响应。这一成果将适用于先进的移动计算机终端、医疗和环境传感器以及汽车仪表设备。*MOS晶体管根据情况提供电流,这种情况被称为“反转”。弱逆变器和中等逆变器提供的是小电流,强逆变器是在大电流下运行。适度反转是低功耗模拟电路设计中越来越重要的领域。弱反转的定义是,如果栅源电压小于阈值电压,则MOS晶体管工作在弱反转状态。这意味着,对于大于阈值电压的栅源电压,晶体管开始以适度反转的方式工作。随着栅源电压的进一步增加,晶体管进入强反转状态。然而,还没有一个简单的模型来描述晶体管漏极电流在适度反转状态下的运行。从所谓的“调和”模型出发,提案的作者能够提供这一模型,该模型可以更好地控制从中度反转到强烈反转的过渡。*将该模型应用于各种电路的设计和研究:放大器、电压调节器和基准电压源是项目的第一个目标。*现代趋势是在两种不同的工作模式下使用集成电路。在第一种模式中,电路没有负载,本身应该消耗尽可能少的功率。在第二种模式下,电路应向负载提供电力。当电路不供电时,晶体管应工作在弱反转或适度反转状态。当施加负载时,晶体管应该几乎立即开始在强反转状态下工作。这对于电源管理电子系统中的电路尤其有效。*该模型适用于具有实际瞬时加载和卸载瞬变的快速响应电路的设计。开发这类电路的复合体是第二个项目目标。*负载和电力瞬变通常都需要快速响应。对快速功率瞬变的设计没有进行充分的研究;用于此目的的方法甚至可能在施加电源电压时破坏电路运行。在电力瞬变过程中,可能会出现不良运行点。它们的发生机制尚不清楚。*第三个项目目标是深入研究这些复杂瞬变中这些点的出现并开发消除它们的方法。*综上所述,该提案将在新的晶体管模型的基础上开发和研究具有快速负载和功率瞬变的电路及其设计方法,并为其可靠运行提供建议。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
数据更新时间:{{ journalArticles.updateTime }}
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
Filanovsky, Igor其他文献
Filanovsky, Igor的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('Filanovsky, Igor', 18)}}的其他基金
New Transistor Model for Transition from Moderate to Strong Inversion and it's Applications for Design of CMOS Integrated Circuits with Fast Load and Supply Transients
从中度反转到强反转过渡的新晶体管模型及其在具有快速负载和电源瞬变的 CMOS 集成电路设计中的应用
- 批准号:
RGPIN-2017-03719 - 财政年份:2021
- 资助金额:
$ 1.75万 - 项目类别:
Discovery Grants Program - Individual
New Transistor Model for Transition from Moderate to Strong Inversion and it's Applications for Design of CMOS Integrated Circuits with Fast Load and Supply Transients
从中度反转到强反转过渡的新晶体管模型及其在具有快速负载和电源瞬变的 CMOS 集成电路设计中的应用
- 批准号:
RGPIN-2017-03719 - 财政年份:2020
- 资助金额:
$ 1.75万 - 项目类别:
Discovery Grants Program - Individual
New Transistor Model for Transition from Moderate to Strong Inversion and it's Applications for Design of CMOS Integrated Circuits with Fast Load and Supply Transients
从中度反转到强反转过渡的新晶体管模型及其在具有快速负载和电源瞬变的 CMOS 集成电路设计中的应用
- 批准号:
RGPIN-2017-03719 - 财政年份:2018
- 资助金额:
$ 1.75万 - 项目类别:
Discovery Grants Program - Individual
New Transistor Model for Transition from Moderate to Strong Inversion and it's Applications for Design of CMOS Integrated Circuits with Fast Load and Supply Transients
从中度反转到强反转过渡的新晶体管模型及其在具有快速负载和电源瞬变的 CMOS 集成电路设计中的应用
- 批准号:
RGPIN-2017-03719 - 财政年份:2017
- 资助金额:
$ 1.75万 - 项目类别:
Discovery Grants Program - Individual
Chip-to-chip communication method and system for wireless testing
用于无线测试的芯片到芯片通信方法和系统
- 批准号:
1714-2010 - 财政年份:2015
- 资助金额:
$ 1.75万 - 项目类别:
Discovery Grants Program - Individual
Chip-to-chip communication method and system for wireless testing
用于无线测试的芯片到芯片通信方法和系统
- 批准号:
1714-2010 - 财政年份:2013
- 资助金额:
$ 1.75万 - 项目类别:
Discovery Grants Program - Individual
Chip-to-chip communication method and system for wireless testing
用于无线测试的芯片到芯片通信方法和系统
- 批准号:
1714-2010 - 财政年份:2012
- 资助金额:
$ 1.75万 - 项目类别:
Discovery Grants Program - Individual
Chip-to-chip communication method and system for wireless testing
用于无线测试的芯片到芯片通信方法和系统
- 批准号:
1714-2010 - 财政年份:2011
- 资助金额:
$ 1.75万 - 项目类别:
Discovery Grants Program - Individual
Chip-to-chip communication method and system for wireless testing
用于无线测试的芯片到芯片通信方法和系统
- 批准号:
1714-2010 - 财政年份:2010
- 资助金额:
$ 1.75万 - 项目类别:
Discovery Grants Program - Individual
Phase noise in radio-frequency quadrature oscillators
射频正交振荡器中的相位噪声
- 批准号:
1714-2005 - 财政年份:2009
- 资助金额:
$ 1.75万 - 项目类别:
Discovery Grants Program - Individual
相似海外基金
Dual Series Gate Configuration, Materials Design, and Mechanistic Modeling for Drift-Stabilized, Highly Sensitive Organic Electrochemical Transistor Biosensors
用于漂移稳定、高灵敏度有机电化学晶体管生物传感器的双串联栅极配置、材料设计和机械建模
- 批准号:
2402407 - 财政年份:2024
- 资助金额:
$ 1.75万 - 项目类别:
Standard Grant
EAGER: APTAMER-INFUSED GRAPHENE TRANSISTOR TATTOOS AS TEMPORARY SWEAT BIOSENSING PLATFORM
EAGER:注入适体的石墨烯晶体管纹身作为临时汗液生物传感平台
- 批准号:
2400494 - 财政年份:2024
- 资助金额:
$ 1.75万 - 项目类别:
Standard Grant
Si tunnel transistor with high on-state current assited by resonant state in quantum well
量子阱谐振态辅助的高通态电流硅隧道晶体管
- 批准号:
23H01476 - 财政年份:2023
- 资助金额:
$ 1.75万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development and integration of organic solar cell and organic transistor materials using graph-based machine learning
使用基于图形的机器学习开发和集成有机太阳能电池和有机晶体管材料
- 批准号:
23H02064 - 财政年份:2023
- 资助金额:
$ 1.75万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of Skyrmion Transistor
斯格明子晶体管的研制
- 批准号:
23K13660 - 财政年份:2023
- 资助金额:
$ 1.75万 - 项目类别:
Grant-in-Aid for Early-Career Scientists
Towards Ultrasensitive Detection of Bacterial Extracellular Electron Transfer in Human Gut by Novel Functionalized Carbon Nanotube Electrode Interfaces and Organic Microbial Electrochemical Transistor
通过新型功能化碳纳米管电极接口和有机微生物电化学晶体管对人体肠道中细菌细胞外电子转移进行超灵敏检测
- 批准号:
23K13651 - 财政年份:2023
- 资助金额:
$ 1.75万 - 项目类别:
Grant-in-Aid for Early-Career Scientists
Organic heterojunction transistor for characteristic electrical property and its application to novel logic circuits
有机异质结晶体管的电特性及其在新型逻辑电路中的应用
- 批准号:
23H00269 - 财政年份:2023
- 资助金额:
$ 1.75万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Ultra-thin topological insulator spin-current transistor
超薄拓扑绝缘体自旋电流晶体管
- 批准号:
2881674 - 财政年份:2023
- 资助金额:
$ 1.75万 - 项目类别:
Studentship
Field effect transistor for DNA sensing
用于 DNA 传感的场效应晶体管
- 批准号:
22KF0384 - 财政年份:2023
- 资助金额:
$ 1.75万 - 项目类别:
Grant-in-Aid for JSPS Fellows
Developing an electrically-driven organic semiconductor laser with field-effect transistor structure
开发具有场效应晶体管结构的电驱动有机半导体激光器
- 批准号:
23KF0101 - 财政年份:2023
- 资助金额:
$ 1.75万 - 项目类别:
Grant-in-Aid for JSPS Fellows