Engineered Nanoparticles for Advanced Photovoltaic, Photonic, and Imaging Applications

用于先进光伏、光子和成像应用的工程纳米颗粒

• 批准号: RGPIN-2015-05832
• 负责人: Sivoththaman, Siva
• 金额: $ 1.6万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2019
• 资助国家: 加拿大
• 起止时间: 2019-01-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=678680
• 关键词: Engineered; Nanoparticles; Advanced; Photovoltaic; Photonic

Advances being made on the synthesis of nano-structured materials and on the ability to engineer their properties emanating from their dimensions and structure will have a strong and positive impact on advanced energy conversion, light-emitting, and imaging applications. Quantum dots (QD) demonstrate extraordinary optoelectronic and photonic properties due to their very nature of quantum confinement. Highly tunable properties can be achieved in such nanocrystals fabricated with controlled architectures. By exploiting these structures and their interfaces new generations of optoelectronic devices can be conceived and new frontiers can be reached in related applications.***In the proposed research QDs and nanowires with desired properties will be synthesized and novel applications will be demonstrated in photovoltaic (PV), photonic, and imaging devices. By employing oil-in-water micro-emulsion processes colloidal solutions of QD solutions will be synthesized. Different architectures and size control will be achieved in fabricating the core/shell/shell and core/shell structures with high luminous quantum efficiency, stability, and lifetime. The QD structures to be fabricated include CdSe/ZnS, CdSe/ZnS/silica, PbS, CuInS2/ZnS. Nanowires of ZnO will be grown by hydrothermal method and also by top-down RIE etching, and will be used in specific device designs, in combination with the QD layers.***QD materials with narrow absorbtion band in the UV region will be employed as photonic down-converters, or as luminescent down-shifters in PV devices. By embedding the QDs in polymeric host media integrable optical converter layers will also be achieved. In addition to their use of optical converters, QDs will also be implemented as active electrical components in QD-sensitized solar cell structures as planar ZnO film/QD structures, and as ZnO nanowire/QD structures with high conversion efficiencies. New light emitting device prototypes employing the synthesized ZnO nanowires in combination with QD layers will be demonstrated to yield white light LEDs. Furthermore, in the firld of detectors, the ability of the QDs to down-convert UV into higher (near infrared) wavelength photons will also be utilized to fabricate advanced detector devices, demonstrating extension of the detection band to include UV capability. The project will demonstrate applicability to novel imaging devices (CCD-based) with integrated layer of QDs with the required absorption/emission bands. Overall, the project involves fabrication methodologies and characterization of nanostructures with tunable properties, and demonstrates, through relatively simple fabrication technologies, advanced devices for future energy, light emission, and imaging applications.**

在纳米结构材料的合成以及从其尺寸和结构中设计其特性的能力方面取得的进展将对先进的能量转换、发光和成像应用产生强烈而积极的影响。量子点（QD）由于其量子限制的性质而表现出非凡的光电和光子特性。高度可调的性能可以实现在这样的纳米晶体与控制架构制造。通过利用这些结构及其接口，可以设想新一代的光电器件，并在相关应用中达到新的前沿。在拟议的研究中，将合成具有所需性能的量子点和纳米线，并将在光伏（PV），光子和成像器件中展示新的应用。通过采用水包油微乳液工艺，将合成QD溶液的胶体溶液。在制造具有高发光量子效率、稳定性和寿命的核/壳/壳和核/壳结构中将实现不同的架构和尺寸控制。制备的量子点结构包括CdSe/ZnS、CdSe/ZnS/silica、PbS、CuInS 2/ZnS。ZnO纳米线将通过水热法和自上而下的RIE蚀刻生长，并将与QD层结合用于特定的器件设计。在紫外光区具有窄吸收带的量子点材料将被用作光子下转换器，或用作光伏器件中的发光下转换器。通过将QD嵌入聚合物主体介质中，还将实现可集成的光学转换器层。 除了使用光学转换器之外，QD还将作为QD敏化太阳能电池结构中的有源电子组件，如平面ZnO膜/QD结构，以及具有高转换效率的ZnO纳米线/QD结构。新的发光器件原型采用合成的ZnO纳米线结合量子点层将被证明产生白色光LED。此外，在检测器领域，QD将UV下转换成更高（近红外）波长光子的能力也将用于制造先进的检测器装置，从而证明检测频带的扩展以包括UV能力。该项目将证明其适用于具有所需吸收/发射带的QD集成层的新型成像设备（基于CCD）。总的来说，该项目涉及制造方法和具有可调特性的纳米结构的表征，并通过相对简单的制造技术展示了未来能源，发光和成像应用的先进设备。