Development of radiation tolerant cell libraries and a RISC-V microcontroller with GF 12nm FinFET technology

采用 GF 12nm FinFET 技术开发耐辐射单元库和 RISC-V 微控制器

• 批准号: 577110-2022
• 负责人: Chen, LiL
• 金额: $ 7.29万
• 依托单位: University of Saskatchewan
• 依托单位国家: 加拿大
• 项目类别: Alliance Grants
• 财政年份: 2022
• 资助国家: 加拿大
• 起止时间: 2022-01-01 至 2023-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=751513
• 关键词: Development; radiation; tolerant; cell; libraries

The overall objectives of the collaborative project with Cisco Systems (Cisco) and Xiphos Systems (Xihos) are to develop fault-tolerant logic circuits fabricated with the most advanced Globalfundries (GF) 12nm FinFET technologies in order to reduce the soft error rate in partners' electronic products. The size of transistors in the modern integrated circuits (ICs) has been scaled to the nanometer range in modern commercial silicon technologies. As a result, ICs have become more vulnerable to single event effects (SEE) induced by energetic particles from either cosmic rays or packaging materials, which are normally referred to as soft errors. The project's main objectives are to characterize the single event effects in the 12nm FinFET process and develop/evaluate the redundant logic techniques to reduce the soft error rates in digital circuits. FinFET technologies have shown substantial reduction in soft error rate and power compared to bulk technologies, which makes them attractive in many industrial applications. There are two phases in this proposed collaborative project. In the first phase, various fault-tolerant storage components like flip-flops and logic gates will be designed and fabricated in a test chip with this technology. A radiation-tolerant standard cell library will also be developed. In the second phase, a fault-tolerant RISC-V microprocessor will be designed with the fault-tolerant standard cell library to evaluate their soft error performance. In each project phase, a test chip will be designed with the proposed test structures. Ion beams (heavy ions, neutron, and protons) will be used to evaluate the test structures' performance. The investigation will also use an on-campus pulsed laser facility to simulate the ion hits. In addition, device and circuit-level simulation tools will be utilized to model and characterize the test circuits' performance. The research will enable our industrial partner using the cost-effective technologies with the advantages (lower power, higher speed, etc.) of nanoscale CMOS technologies without compromising reliability and performance. Two PhD, one M.Sc, one undergraduate student and one postdoc fellow will be trained in this project alone with producing publications in the silicon reliability field.

与思科系统（Cisco Systems）和Xiphos Systems（Xihos）合作项目的总体目标是开发采用最先进的Globalfundries（GF）12 nm FinFET技术制造的容错逻辑电路，以降低合作伙伴电子产品的软错误率。在现代商业硅技术中，现代集成电路（IC）中的晶体管的尺寸已经缩放到纳米范围。因此，IC变得更容易受到来自宇宙射线或封装材料的高能粒子引起的单粒子效应（SEE）的影响，这通常被称为软错误。该项目的主要目标是表征12纳米FinFET工艺中的单粒子效应，并开发/评估冗余逻辑技术以降低数字电路中的软错误率。与体技术相比，FinFET技术在软错误率和功耗方面表现出了显著的降低，这使得它们在许多工业应用中具有吸引力。这个拟议的合作项目分两个阶段。在第一阶段，各种容错存储组件，如触发器和逻辑门将设计和制造在一个测试芯片与这项技术。还将开发一个耐辐射标准单元库。在第二阶段，将设计一个容错的RISC-V微处理器与容错标准单元库，以评估其软错误性能。在每个项目阶段，测试芯片将被设计与建议的测试结构。离子束（重离子、中子和质子）将用于评估测试结构的性能。调查还将使用校园内的脉冲激光设备来模拟离子撞击。此外，器件和电路级仿真工具将被用来模拟和表征测试电路的性能。该研究将使我们的工业合作伙伴能够使用具有成本效益的技术，这些技术具有优势（低功耗，高速度等）。纳米级CMOS技术，而不影响可靠性和性能。两名博士，一名硕士，一名本科生和一名博士后研究员将在这个项目中单独培训，并在硅可靠性领域发表论文。