Boron Doping of GaN

GaN的硼掺杂

• 批准号: 576166-2022
• 负责人: Kavanagh, KarenKL
• 金额: $ 1.82万
• 依托单位: Simon Fraser University
• 依托单位国家: 加拿大
• 项目类别: Alliance Grants
• 财政年份: 2022
• 资助国家: 加拿大
• 起止时间: 2022-01-01 至 2023-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=762285
• 关键词: Boron; Doping; GaN

The Kavanagh group at Simon Fraser University will collaborate with the Goldman group at the University of Michigan towards replacing some of the gallium (Ga) in the semiconductor gallium nitride (GaN) with boron (B) atoms to form gallium boron nitride (GaBN). Adding B will change the properties of GaN including its ability to emit light and its conductivity. In the extreme case, replacing all of the Ga with B one forms BN which is an insulator and well-known machinable ceramic. The Kavanagh lab has experience with a molecular gas, borazine, that contains B which they have used to grow monolayers of crystalline BN on copper substrates. In monolayer form, BN is being applied in novel two-dimensional device structures often interfacing a conductor such as monolayer graphite (graphene) with a semiconductor (eg. molydenum disulfide). They will help members of the Goldman lab add a borazine gas leak into their low pressure growth chamber where they already are growing GaN single crystals. The maximum solubility of B in GaN depends on the effective temperature used in the material formation. The chamber has methods to control the temperature and rate of growth using substrate heating, ion implantation and plasma sources. The properties of GaBN grown onto suitable substrates will be confirmed with various characterization techniques available within the chamber and ex situ at both universities. The members of each team will be exposed to new capabilities and experimental analyses that are not available at their separate laboratories. Joint publications and presentations are expected as well as a novel nitride semiconductor that adds to the existing range of this important class of optoelectronic materials.

西蒙弗雷泽大学的Kavanagh小组将与密歇根大学的Goldman小组合作，用硼(B)原子取代半导体氮化镓(GaN)中的部分镓(Ga)，形成氮化镓(GaBN)。添加B将改变GaN的性质，包括其发光能力和导电性。在极端情况下，用Bone取代所有的Ga形成BN，这是一种绝缘体和众所周知的可加工陶瓷。Kavanagh实验室在一种名为Borazine的分子气体方面有经验，这种气体含有B，他们曾用这种气体在铜衬底上生长单层晶体BN。在单层形式中，BN正被应用于新颖的二维器件结构，通常将导体如单层石墨(石墨烯)与半导体(例如。二硫化钼)。他们将帮助高盛实验室的成员向他们已经在生长GaN单晶的低压生长室中添加一种硼氮酮气体泄漏。B在GaN中的最大溶解度取决于材料形成所用的有效温度。该腔体采用衬底加热、离子注入和等离子体源等方法来控制温度和生长速度。生长在合适的衬底上的GaBN的性质将通过室内和两所大学异地提供的各种表征技术来确认。每个团队的成员将接触到各自实验室无法获得的新能力和实验分析。预计将发表联合出版物和演讲，以及一种新型氮化物半导体，它增加了这一重要类别的光电材料的现有范围。