Boron Doping of GaN

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The Kavanagh group at Simon Fraser University will collaborate with the Goldman group at the University of Michigan towards replacing some of the gallium (Ga) in the semiconductor gallium nitride (GaN) with boron (B) atoms to form gallium boron nitride (GaBN). Adding B will change the properties of GaN including its ability to emit light and its conductivity. In the extreme case, replacing all of the Ga with B one forms BN which is an insulator and well-known machinable ceramic. The Kavanagh lab has experience with a molecular gas, borazine, that contains B which they have used to grow monolayers of crystalline BN on copper substrates. In monolayer form, BN is being applied in novel two-dimensional device structures often interfacing a conductor such as monolayer graphite (graphene) with a semiconductor (eg. molydenum disulfide). They will help members of the Goldman lab add a borazine gas leak into their low pressure growth chamber where they already are growing GaN single crystals. The maximum solubility of B in GaN depends on the effective temperature used in the material formation. The chamber has methods to control the temperature and rate of growth using substrate heating, ion implantation and plasma sources. The properties of GaBN grown onto suitable substrates will be confirmed with various characterization techniques available within the chamber and ex situ at both universities. The members of each team will be exposed to new capabilities and experimental analyses that are not available at their separate laboratories. Joint publications and presentations are expected as well as a novel nitride semiconductor that adds to the existing range of this important class of optoelectronic materials.