近年来电子器件结构朝着可复杂变形的趋势迅速发展。可复杂变形功能器件不可避免产生应力应变梯度，从而形成应力应变梯度与极性耦合的挠曲电效应。大量研究表明低维铁电材料存在明显的挠曲电效应，能够显著影响低维铁电材料相变、介电、极化等基本特性及相关特性。揭示低维铁电材料的挠曲电效应及其对相关性能的调控性十分关键。然而当前针对铁电挠曲电效应的理论及实验研究依然严重不足，材料的挠曲电系数、挠曲电效应对铁电基本特性及畴结构演化影响机理的研究还处于起步阶段。本项目拟综合考虑挠曲电效应与力学加载、结构、尺寸、温度、表面、界面等多重因素作用，针对极性畴结构形成、演化、演化以及极性信息力学载荷可擦写特性进行深入研究，建立低维铁电材料挠曲电效应多尺度模拟方法，系统研究低维铁电材料制备工艺和挠曲电效应测试表征方法，为挠曲电效应在极性存储、信息传感等器件及其它功能器件的设计、应用与发展奠定力学研究基础。

In recent years development of electronic devices undergoes the rapid trend towards complex and deformable structures. Functional devices with complex and deformable structures inevitably generate stress and strain gradients, thereby leading to the coupling between stress/strain gradients and polarization, namely flexoelectric effect. Numerous studies show that low-dimensional ferroelectric materials exhibit significant flexoelectric effect, which can largely affect the basic characteristics (such as phase transition, dielectric, polarization) and other related properties of low-dimensional ferroelectric materials. It is critical to reveal the flexoelectric effect and its regulation on relevant performance of low-dimensional ferroelectric materials. However, currently there is a serious shortage of both theoretical and experimental research on ferroelectric flexoelectric effect. Research on flexoelectric coefficient and the mechanism of flexoelectric effect on basic material characteristics and on the evolution of ferroelectric domain structure is still in its infancy. This project intends to consider flexoelectric effect and its coupling with multiple factors including mechanical loads, structure, size, temperature, surface and interface, etc., to make an in-depth study on the formation, stability and evolution of polar domain structure and the mechanical erasing of polar domain information. We will establish multiscale simulation methods for the flexoelectric effect of low-dimensional ferroelectric materials and systematically explore experimental method of processing low dimensional ferroelectric materials and characterizing their flexoelectric effect. Our study will lay the foundation of mechanic research for the design, application and development of polar domain storage, information sensing devices and other functional devices based on flexoelectric effect.