Thermal stability of resistive switching effect in ZnO/BiFeO3 bilayer structure
Thermal stability of resistive switching effect in ZnO/BiFeO3 bilayer structure
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ZnO/BiFeO3双层结构阻变效应的热稳定性
DOI：
10.1063/1.5053577
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发表时间：
2019-03
期刊：
影响因子：
1.6
通讯作者：
Zheng Yue
中科院分区：
文献类型：
--
作者：
Zhang H. Y.;Xiong W. M.;Zhang X. Y.;Wang Biao;Zheng Yue
阻变存储器（R-RAM）器件具有良好的上级热稳定性是实现高可靠性的关键。通过界面改性可以使ZnO/BiFeO 3双层结构具有热稳定的阻变特性。采用化学溶液沉积方法，通过优化退火工艺制备出界面清晰的双层结构。这种双层结构显示出更好的热稳定性相比，一个模糊的界面的情况下。本文试图从导电丝机理来解释这种效应。我们认为，氧空位在不同界面上迁移的限制可能是热稳定性的原因。研究结果表明，界面形貌是提高阻变存储器热稳定性的重要因素，良好的阻变性能的上级热稳定性是高可靠性阻变存储器（R-RAM）器件的关键。通过界面改性可以使ZnO/BiFeO 3双层结构具有热稳定的阻变特性。采用化学溶液沉积方法，通过优化退火工艺制备出界面清晰的双层结构。这种双层结构显示出更好的热稳定性相比，一个模糊的界面的情况下。本文试图从导电丝机理来解释这种效应。我们认为，氧空位在不同界面上迁移的限制可能是热稳定性的原因。结果表明，界面形貌是提高R-RAM热稳定性的重要因素。
Superior thermal stability of resistive switching performance is essential for resistive random access memory (R-RAM) device with high reliability. Thermal stable resistive switching performance can be achieved in ZnO/BiFeO3 bilayer structure by modifying the interface. The bilayer structure with a distinct interface is fabricated with an optimized annealing process in chemical solution deposition method. This bilayer structure shows a better thermal stability compared to the case with an indistinct interface. Attempt has been made to explain such effects based on conductive filament mechanism. We propose that the confinement of the oxygen vacancies migration at distinct interface could be the reason for the thermal stability. Our results indicate that morphology of interface is an important factor to improve the thermal stability of R-RAM.Superior thermal stability of resistive switching performance is essential for resistive random access memory (R-RAM) device with high reliability. Thermal stable resistive switching performance can be achieved in ZnO/BiFeO3 bilayer structure by modifying the interface. The bilayer structure with a distinct interface is fabricated with an optimized annealing process in chemical solution deposition method. This bilayer structure shows a better thermal stability compared to the case with an indistinct interface. Attempt has been made to explain such effects based on conductive filament mechanism. We propose that the confinement of the oxygen vacancies migration at distinct interface could be the reason for the thermal stability. Our results indicate that morphology of interface is an important factor to improve the thermal stability of R-RAM.
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