高k栅介质SrTiO3与二维材料MX2界面输运特性研究

人工智能的快速发展对电子信息器件的集成度要求越来越高，其中高k栅介质材料与高电子迁移率的二维材料的结合是实现器件微型化的重要方式。但是晶体结构的大失配和不对称性严重阻碍了两者的有效耦合(如SrTiO3为立方结构，MX2为六方结构)。因此，优化界面结构是提高界面输运特性的关键。本项目拟采用化学气相沉积的方法在立方对称的SrTiO3薄膜上制备MX2层，利用高亮度的同步辐射光谱技术研究衬底对称性对MX2/SrTiO3界面结构的影响。结合第一性原理的计算方法分析衬底对称性对界面结构的调控机理。此项目的开展有望建立MX2/SrTiO3界面结构与传输特性的关系图像，获得与高效电学传输特性界面对应的薄膜厚度和衬底结构,同时为设计其他高k栅介质材料与二维材料的集成提供科学依据。

The rapid development of artificial intelligence requires highly integration of the electronic devices. Thereinto, the combination of high-k gate dielectrics and the high electron-mobility of two dimensional materials is an important way to realize the miniaturization of devices. However, the large mismatch and the asymmetry of the crystal structure seriously hinder their efficient coupling (SrTiO3 possesses cubic structure while MX2 is hexagonal). Optimizing interfacial structure is a critical factor to enhance the corresponding transport behavior. In this project, we propose to fabricate the MX2 film on SrTiO3 cubic substrates by chemical vapor deposition, to investigate the interfacial structure by advanced synchrotron spectroscopy. Combined with the results from first-principles calculations, this work is aiming to obtain an optimized interfacial structure of enhanced transport behavior and reveal the tuning mechanism of substrate effect. Furthermore, this proposal will provide a guideline for the design of other two dimensional materials and high-k gate dielectrics.