耐高温、抗辐照、低活化的SiC材料在各种核能系统中有广泛应用。高温辐照下SiC中空洞型缺陷会导致非饱和的辐照肿胀，且高温下辐照缺陷的累积可能导致其阻挡裂变产物迁移能力的下降，因此SiC中空洞型缺陷的形成机理非常重要。中子辐照实验成本高耗时长，重离子模拟中子辐照研究引起人们关注。本项目通过分别对SiC和含有He泡SiC进行800℃高温Si离子辐照和1600℃退火的方法，模拟中子辐照损伤，通过对SiC中各种缺陷（He泡、空洞和位错环等）形成及演变规律的观测，结合He和空位相互作用的理论模拟，研究He对空洞型缺陷形成的贡献，并探索SiC中空洞型缺陷的形成机理；通过测量实验各个阶段样品中缺陷类型、大小和密度，辐照肿胀以及应力的变化规律，与已有中子辐照实验数据对比讨论，开展高温辐照环境下重离子和中子在SiC中形成辐照肿胀和辐照缺陷的异同性讨论，对SiC在各种先进核能系统中的安全应用具有重要的意义。

SiC has extensive application in nuclear systems, due to its excellent resistance to high temperatures and irradiation, low neutron activation cross sections. Voids induced by high temperature irradiation can lead to unsaturated swelling in SiC, and the accumulation of defects can enhance the diffusion of fission products. Therefore, it is crucial to study the mechanism of void formation. Compared with neutron irradiation, heavy ion irradiation has the advantages of higher dose rate and lower cost. To emulate the neutron irradiation, SiC with and without He bubbles are irradiated by heavy ions at 800°C and subsequently annealed at 1600°. Investigations on the formation and evolution of extended defects such as He bubbles, voids and dislocations, combined with the modeling of helium-vacancy interactions are employed to study the effects of He on the formation of void defects and the mechanism of void formation. The density and size of defects and the evolution of irradiation-induced swelling and strain are measured and compared with the results of previous neutron irradiation experiments, to evaluate the correlations between heavy ion irradiation and neutron irradiation in terms of swelling and damage production, which is important for the safety in the application of SiC in the advanced nuclear systems.