嵌套型双向可控硅TVS器件及其片上集成技术研究

本项目旨在探索一种万伏级嵌套型双向可控硅TVS器件的静电特性及其单片集成技术：探究嵌套型双向可控硅器件在ESD脉冲应力下的工作机制和形成“多米诺”触发的条件，建立嵌套型器件的维持电压估算模型；设计三种嵌套型双向可控硅TVS器件，考察器件嵌套方式、嵌套层数、工艺层次、关键尺寸对器件主要指标，特别是对维持电压和失效电流的影响；研究嵌套型双向可控硅TVS器件与RS485总线接口电路的单芯片集成技术。解决多叉指器件电流非均匀泄放、嵌套型器件寄生电阻T型网络构建两个关键问题。形成万伏级嵌套TVS器件新结构、片上集成系统级静电保护TVS器件新方法两个技术创新点。新器件将达成高维持电压、失效电流20A、系统级IEC61000-4-2标准接触放电15kV的设计目标。新器件及其片上集成技术将为工业控制、汽车电子、物联网接入设备的系统级静电保护提供设计参考，降低电子系统复杂度、提高系统可靠性。

This project aims to explore the electro-static characteristics and monolithic integration technology for embedded dual-direction silicon controlled rectifier TVS device at a ten-thousand volt level. To explore the working mechanism of embedded DDSCR under ESD pulse stress, the conditions for "domino" triggering, and establish the holding voltage estimation model. Three embedded DDSCR TVS devices are designed, and the influence of embedding pattern, embedding hierarchy, process layer and key dimension on holding voltage and failure current is examined. Monolithic integration of TVS device and RS485 bus interface circuit is researched. The two key problems of the T-pattern parasitic resistor network constructing and the non-uniform current discharge in multi-finger device are considered. Two technical innovation of a novel ten-thousand volt embedded structure, and a new method for TVS device integration are formed. The new device will achieve a high holding voltage, owns a failure current of 20A, and a system level IEC61000-4-2 contact discharge rank of 15kV. The new device and its integration technique will provide a system level ESD protection design reference for industrial control, automotive, access equipment of IOT, obtaining electronic system complexity reduction and reliability improvement.