Cu2ZnSnS4（CZTS）基薄膜太阳电池近年来一直被广泛的研究，目前，被广泛采用电池结构是以Cu2ZnSn(S, Se)4（CZTSSe）为吸收层，CdS为缓冲层。但Se和Cd有毒，对环境和健康有害。因此，探寻无Se的吸收层和无Cd的缓冲层材料，研制高效、环保的CZTS基太阳电池成为该领域的重要研究内容。本项目提出以In掺杂CZTS（CZTS：In）为吸收层，In2S3为缓冲层，设计和制备高效、环保的CZTS：In/ In2S3异质结薄膜太阳电池；探索获得高质量的CZTS：In吸收层和In2S3缓冲层材料的物理方法和技术途径；研究In掺杂对CZTS：In能带结构、晶体质量、光电性能的影响规律和机制；研究In2S3 缓冲层中的缺陷及其对光电性能的影响规律和机制；阐明CZTS：In/ In2S3界面内建电场与晶格失配、能带排列的关联及其对Voc和转换效率的影响规律和机制。

Cu2ZnSnS4 (CZTS) thin film solar cells have been widely investigated recent years. At present, the cell structure of Cu2ZnSn (S, Se)4 (CZTSSe) as the absorbing layer and CdS as buffer layer is used widely. But the Se and Cd are toxic substances, which can make a great damage to the environment and health. Therefore, it is the important research content of this field to explore absorbing layer material without Se and buffer layer materials without Cd, to develop high efficiency and environmental CZTS based solar cells. In this project, we will adopt CZTS：In as absorbing layer and In2S3 as buffer layer to design and prepare high efficiency and environmental CZTS：In/In2S3 heterojunction thin film solar cells; to explore the physical method and technical way of obtaining high-quality CZTS absorbing layer and In2S3 buffer layer material; to study the influence of In doping on electronic structure, crystal quality, photoelectric properties of CZTS：In films and related physical mechanism; to research the defects in In2S3 buffer layer and its effect on photoelectric properties; to clarify the contact of CZTS：In/In2S3 interface built-in electric field and lattice mismatch as well as the band alignment, and its influence law and mechanism to Voc and conversion efficiency.