本项目针对2μm波段分布反馈（DFB）量子阱激光器的潜在巨大应用需求以及其研制过程中所面临的关键科学和技术问题，结合申请人在2μm波段InAs/InP大晶格失配量子阱材料外延生长及激光器制备方面的研究基础，开展基于MOCVD的InP基2μm波段DFB量子阱激光器制备技术和相关机理研究。重点研究2μm波段DFB量子阱激光器的结构设计和外延、器件制备工艺及性能测试分析，澄清材料性能、器件结构以及工艺对激光器输出特性的影响，发展提高器件电光转换效率的新机制，从而实现从材料到器件性能的突破。为发展我国具有自主知识产权和规模化应用前景的高性能中红外半导体激光器提供新思路和新技术。

Facing the key scientific issues of fabricating InP-based distributed feedback(DFB) quantum well lasers emitting at 2μm region, which have potential applications in many areas, the project will carry out the research on fabrication of InP-based 2μm-region DFB quantum well lasers grown by MOCVD, combined with the research basis in material growth of large lattice-mismatch InAs/InP quantum wells as well as laser fabrication the applicant has had. The research work will be mainly placed on the following aspects including laser structure design and epitaxial growth, device fabrication as well as their performances testing and analyses. By these study, impacts of device structures and material properties on the laser output characteristics can be clarified and the electro-optical conversion efficiency can also be improved, realizing the breakthrough from material property to device performence. Through the implementation of this project we finally hope to provide new ways and new techniques for our country in developing high-performance mid-infrared semiconductor lasers with independent intellectual property rights.