缺陷工程调控单层二硫化钼电输运性能及其电子器件构筑研究

单层二硫化钼因其结构稳定、具有直接带隙和理论高电子迁移率而在原子层厚度二维电子和光电子器件的构筑方面具有潜在的应用前景。研究者围绕单层MoS2电输运性能的调控和电子器件的构筑开展了大量基础研究工作，不断刷新了电子和光电子器件的性能指标。然而，本征结构缺陷对单层MoS2电输运性能的调控机制问题却一直未能取得突破。究其原因，主要是现有的缺陷制造手段无法实现对单层MoS2空位、团簇等缺陷类型和缺陷浓度的有效调控。因此，实现缺陷的可控构筑对对研制高性能MoS2晶体管等电子器件至关重要。本项目以单层MoS2为典型研究对象，通过溶液法、气相法、粒子轰击法实现缺陷类型和缺陷浓度精确调控，进而揭示缺陷对单层MoS2电子结构和电输运性能的调控规律和机制，制造出迁移率高、开关比大的单层MoS2电子器件，并将缺陷调控机制在其他二维材料体系进行验证和推广。

Monolayer MoS2 with atomic layer thickness has attractive application prospect in the construction of 2D electronic and optoelectronic devices due to its stable structure, direct bandgap and high theoretical electron migration rate. A large amount of basic research has been carried out about the modulation of single layer MoS2 electrical transport performance and the construction of electronic devices, and the indexes of electronic and optoelectronic devices have constantly refreshed. However, the modulation mechanism of intrinsic structural defects for single layer MoS2 has not been made a breakthrough, because effective modulation of defect types and defect concentration for single layer MoS2 vacancies, clusters cannot be realized by existing methods of manufacturing defects. Thus, to achieve controllable construction of defects is important for building high performance electronic devices such as MoS2 transistor. In this project, we take single layer MoS2 as the typical research object. Accurate modulation of defect types and defect concentration by solution method, vapor method and particle collision method has been achieved, then the defect modulation mechanism of defects on single layer MoS2 electronic structure and electrical transport performance has been revealed. High mobility, large ON-OFF ratio electronic devices have been fabricated, and the defect modulation mechanism has been verified and popularized in other 2D material systems.