SnTe是一种拓扑晶态绝缘体（简称TCIs），也是一种潜在的高性能环保型热电材料。在不破坏其TCIs特性的前提下，本项目先通过成分掺杂调控其热电性能，在此基础上再通过控制热锻轧和急冷工艺在其中引入大量位错，通过对位错密度与SnTe基材料表面电子态及热电性能之间关系的研究，一方面可以给出SnTe基TCIs中位错无能隙态存在与否的答案，这对SnTe基TCIs来说将是一个全新发现。而且还可以进一步提高SnTe材料的热电性能。因为如果存在位错无能隙态，位错将成为良好导电通道，SnTe基材料的热电性能将可望得到突破性提高；即使不存在无带隙态，由于位错提高了SnTe晶格的无序度，而且加工变形细化了材料的微结构，大幅降低了声子热导率，也可以进一步优化SnTe基材料的热电性能。本研究不仅可以从理论上探明位错对SnTe基材料热电性能的影响机理，对优化其热电性能以及探索发展新型热电材料也具有重要应用参考价值。

SnTe compound is a potential green thermoelectric material, and it is also a new type of topological insulators,namely,topological crystalline insulators (TCIs). In this project, the thermoelectric properties of SnTe-based materials will be improved firstly by doping and alloying in the context of no destroying their TCIs. Based on this, high density dislocations will then be introduced to the SnTe-based materials by means of heat forging and subsequent quenching. The relationship between the dislocation density，surface electronic state and thermoelectric properties of the SnTe-based materials will be studied to find out whether the dislocations are gapless or not in the SnTe-based topological crystalline insulators. Obviously,the result will be a brand new discovery to the SnTe-based topological crystalline insulators. Moreover,the thermoelectric properties of SnTe-based materials can also be further improved by the introduction of dislocations. This is because dislocations would be excellent paths for electrical transport if they were gapless in SnTe-based topological crystalline insulators. On the other hand, the lattice becomes disordered and the microstructure of SnTe-based materials will be refined by heat forging deformation, the phonon scattering will be enhanced accordingly, therefore the thermoelectric properties can also be improved greatly by the introduce of high density dislocations even if the gapless state is nonexistent in the dislocations of SnTe-based topological crystalline insulators.This study is of theoretical significance in uncovering the affecting mechanism of dislocations on thermoelectric properties of SnTe-based TCIs on one hand, and it is also meaningful and valuable to both the improvement of thermoelectric propertis of SnTe-based materials and the development of new thermoelectric materials.