高性能放大器件的缺乏已经严重阻碍太赫兹系统的广泛应用，太赫兹InP异质结双极型晶体管（HBT）是解决这一瓶颈问题的核心器件，也是目前太赫兹技术的研究热点。然而，基于经验的传统等效电路建模方法，基本上没有考虑HBT在太赫兹频段出现的特殊物理效应，如非准静态效应、速度饱和效应及趋肤效应等，造成模型不准确。本项目针对这一现状，提出采用蒙特卡洛加强漂移扩散法（MC-E-DD）深入研究太赫兹频段InP HBT的特殊物理效应，并结合晶体管的器件结构、工艺，建立HBT的本征结模型；拟运用三维全波电磁仿真方法来研究HBT无源寄生部分，建立其非本征结模型。在此基础上建立的精细物理基模型可以指导太赫兹InP HBT器件的开发及相应放大电路的准确设计。该研究方法也可推广到太赫兹SBD、HEMT等器件的精确建模，将为太赫兹半导体器件的研发打下坚实的模型基础，从而极大地推动太赫兹科技发展。

The lack of high performance terahertz (THz) amplifier is the major impediment to the application of THz systems. As one solution to it, the THz indium phosphide (InP) heterojunction bipolar transistor (HBT) is also a hot research issue at present. However, conventional InP HBT models which are inefficient in terahertz band based on the equivalent-circuit theory do not fully consider the special physical effects in terahertz band such as non-quasi-static effect, velocity saturation effect, skin effect, etc. In this proposal, we will deeply investigate the special physical effects of InP HBT in terahertz band by using Monte Carlo Enhanced Drift-Diffusion（MC-E-DD）method, and establish a non-linear intrinsic device model on the basis of in-depth researches on device structure and manufacture process. In addition, a non-intrinsic device model will also be established, which is extracted by 3D EM simulation method. The proposed accurate physical-based THz InP HBT model can play an important role in the development of terahertz InP HBT and the precise design of terahertz amplifiers. Moreover, the idea in this proposal can also be applied to other cases such as terahertz SBD, HEMT, etc. This work will lay a solid foundation for the research on the development of terahertz solid-state devices and then advance the development of the terahertz science and technology.