空间辐射诱发PPD CMOS图像传感器信号转移损失的物理机制研究

星载CMOS图像传感器是遂行空间监视、攻防和态势感知能力的核心器件。然而，其对空间辐射损伤特别敏感，严重时甚至出现功能失效，已成为制约我国航天装备型号在轨高可靠、长寿命运行的关键技术瓶颈之一。随着“载人航天工程”、高分辨率对地观测工程”等重大航天工程的实施,在轨高分辨率大阵列成像、高帧频输出、实时信号反馈等需求牵引，空间辐射诱发大阵列PPD CMOS图像传感器的信号转移损失问题日益突出，但目前国内外均缺少深入的实验和理论研究，本项目拟以航天广泛应用的0.18 μm工艺大阵列PPD CMOS图像传感器为研究对象，通过开展加速器质子、反应堆中子、伽马射线等地面模拟辐照实验、仿真模拟、辐射粒子输运模拟计算，并结合在轨成像数据分析，深入揭示空间辐射诱发PPD CMOS图像传感器信号转移损失的物理机制，为保障我国中长期航天器成像系统在轨效能发挥及抗空间辐射加固技术研究提供理论基础和实验技术支持。

The CMOS image sensors used in space satellites are the key devices of the capability in space surveillance, attacking, and situation awareness. However, the CMOS image sensors are very sensitive to the space radiation damage, which can even induce the CMOS image sensors to be functional failure. It has become one of the key technique bottleneck problems on high reliable and long life operation of long term spacecraft in orbit. With the implementations of the “manned space flight project” and “high resolution earth observation project” and the requirements of the imaging of high resolution and large arrays, high frame rate output, and the real time signal feedback, the problems of the charge transfer loss of PPD CMOS image sensors induced by space radiation are becoming increasingly prominent. However, the researches of theories and experiments about these problems are lacked. This project will plan to research the physics mechanisms on the charge transfer loss of 0.18 μm PPD CMOS image sensors induced by space radiation in depth. The experiments of the PPD CMOS image sensors irradiated by the accelerator protons, the reactor neutrons, and the 60Co γ rays will be carried out separately. By combining the radiation experiments with the simulations of radiation damage, the transportion simulation of the radiation particles, and the on-orbit images, the physics mechanisms on the charge transfer loss of 0.18 μm PPD CMOS image sensors induced by space radiation are researched in depth. It will provide the basis of the theories and experimental techniques for ensuring the orbital function and radiation hardening techniques of the PPD CMOS image sensors.