Analyzing the transient effects of 60Co gamma rays in a CIS by Monte Carlo method

Analyzing the transient effects of 60Co gamma rays in a CIS by Monte Carlo method
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用蒙特卡罗方法分析 CIS 中 Co-60 伽马射线的瞬态效应

DOI:
10.1007/s41365-019-0634-y
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发表时间:
2019-06
影响因子:
2.8
通讯作者:
Guantao Dong
Guantao Dong
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Yuanyuan Xue;Zujun Wang;Minbo Liu;Rui Xu;Hao Ning;Wen Zhao;Baoping He;Zhibin Yao;Jiangkun Sheng;Wuying Ma;Guantao Dong

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基于Geant4. 0软件,采用蒙特卡罗方法分析了60Co γ射线对CMOS图像传感器(CIS)的瞬态效应。计算了γ射线穿过硅或二氧化硅立方体时产生的电子的径迹、能谱和角度。建立了500 × 500 CIS阵列的简化模型,模拟了CIS中γ射线的瞬态效应。当CIS被伽马射线照射时捕获原始图像。将实验结果与仿真结果进行了比较。分析了瞬态效应诱发的典型事件的特征。
The objective of this work is to analyze the transient effects of 60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.
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